This paper describes a 320 Gb/s high-speed multichip ATM switching system for broadband ISDN. This system employs a copper-polyimide MCM with 4-layer copper-polyimide signal transmission layers and 15-layer ceramic power supply layers. The system uses 64 MCM's that are interconnected by 98-highway flexible printed circuit connector. Si-bipolar VLSI's are mounted on MCM's using the 150 µm very-thin pitch outer lead TAB technique. In addition, a high-performance heat-pipe air cooling technique is adopted. The system switches ATM cells up to 320 Gb/s throughput, which is applicable for future. B-ISDN.
|IEEE Transactions on Components Packaging and Manufacturing Technology Part B
|Published - 1995 2月
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