TY - JOUR
T1 - 6 W/25 mm2 wireless power transmission for non-contact wafer-level testing
AU - Radecki, Andrzej
AU - Chung, Hayun
AU - Yoshida, Yoichi
AU - Miura, Noriyuki
AU - Shidei, Tsunaaki
AU - Ishikuro, Hiroki
AU - Kuroda, Tadahiro
PY - 2012/4
Y1 - 2012/4
N2 - Wafer-level testing is a well established solution for detecting manufacturing errors and removing non-functional devices early in the fabrication process. Recently this technique has been facing a number of challenges, resulting from increased complexity of devices under test, larger number and higher density of pads or bumps, application of mechanically fragile materials, such as low-k dielectrics, and ever developing packaging technologies. Most of these difficulties originate from the use of mechanical probes, as they limit testing speed, impose performance limitations and add reliability issues. Earlier work focused on relaxing these constraints by removing mechanical probes for data transmission and DC signal measurement and replacing them with non-contact interfaces. In this paper we extend this concept by adding a capability of transferring power wirelessly, enabling non-contact wafer-level testing. In addition to further improvements in the performance and reliability, this solution enables new testing scenarios such as probing wafers from their backside. The proposed system achieves 6 W/25 mm2 power transfer density over a distance of up to 0.32 mm, making it suitable for non-contact wafer-level testing of medium performance CMOS integrated circuits.
AB - Wafer-level testing is a well established solution for detecting manufacturing errors and removing non-functional devices early in the fabrication process. Recently this technique has been facing a number of challenges, resulting from increased complexity of devices under test, larger number and higher density of pads or bumps, application of mechanically fragile materials, such as low-k dielectrics, and ever developing packaging technologies. Most of these difficulties originate from the use of mechanical probes, as they limit testing speed, impose performance limitations and add reliability issues. Earlier work focused on relaxing these constraints by removing mechanical probes for data transmission and DC signal measurement and replacing them with non-contact interfaces. In this paper we extend this concept by adding a capability of transferring power wirelessly, enabling non-contact wafer-level testing. In addition to further improvements in the performance and reliability, this solution enables new testing scenarios such as probing wafers from their backside. The proposed system achieves 6 W/25 mm2 power transfer density over a distance of up to 0.32 mm, making it suitable for non-contact wafer-level testing of medium performance CMOS integrated circuits.
KW - Inductive coupling
KW - Inductive power transfer
KW - Wafer-level testing
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U2 - 10.1587/transele.E95.C.668
DO - 10.1587/transele.E95.C.668
M3 - Article
AN - SCOPUS:84859391957
SN - 0916-8524
VL - E95-C
SP - 668
EP - 676
JO - IEICE Transactions on Electronics
JF - IEICE Transactions on Electronics
IS - 4
ER -