@article{2b9ef725cd3948189f121dc7eb86846b,
title = "A 0.025-0.45 W 60%-efficiency inductive-coupling power transceiver with 5-bit dual-frequency feedforward control for non-contact memory cards",
abstract = "A 0.025-0.45 W inductive-coupling power transceiver for non-contact memory applications is presented. To deal with sudden and large load variations and achieve high-efficiency, we propose a power transceiver with 5-bit feedforward control. Knowing that load patterns of a memory card have strong correlation with commands issued by a host, feedforward control is applied to minimize response times. To achieve 5-bit power levels, the proposed transceiver utilizes pulse-density modulation (PDM) and a multi-channel structure. Different operation frequencies are chosen for each channel to maximize power transfer efficiency. To further improve transceiver efficiency and enable high-speed operation, an active rectifier with a fast positive feedback is proposed. The test prototype demonstrates 40%-70% efficiency across all load conditions and 60% efficiency in average, which are over an order of magnitude improvements compared to prior arts.",
keywords = "Active rectifier, dual-frequency, feedforward, high efficiency, inductive-coupling, power transceiver, wide load range",
author = "Hayun Chung and Andrzej Radecki and Noriyuki Miura and Hiroki Ishikuro and Tadahiro Kuroda",
note = "Funding Information: Manuscript received March 16, 2012; revised June 12, 2012; accepted June 19, 2012. Date of publication August 31, 2012; date of current version October 03, 2012. This paper was approved by Associate Editor Peter Gillingham. This work was supported by CREST/JST. H. Chung was with Keio University, Yokohama, 223-8522 Japan. She is currently with the Korea Advanced Institute of Science and Technology, Deajeon, 305-701 Korea (e-mail: hayun4@gmail.com). A. Radecki, N. Miura, H. Ishikuro, and T. Kuroda are with Keio University, Yokohama, 223-8522 Japan. Color versions of one or more of the figures in this paper are available online at http://ieeexplore.ieee.org. Digital Object Identifier 10.1109/JSSC.2012.2206686",
year = "2012",
doi = "10.1109/JSSC.2012.2206686",
language = "English",
volume = "47",
pages = "2496--2504",
journal = "IEEE Journal of Solid-State Circuits",
issn = "0018-9200",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "10",
}