@article{9d7966b549634bccbb09101e6dcbad5d,
title = "A 0.14 pJ/b Inductive-Coupling Transceiver With Digitally-Controlled Precise Pulse Shaping",
abstract = "A transceiver for inductive-coupling is realized. By using a pulse-shaping circuit, the transmitter energy is 0.11 pJ/b. Due to device scaling from 180 nm CMOS to 90 nm CMOS, the receiver energy is 0.03 pJ/b. The overall energy dissipation is 20X lower than previous work, without degrading the data rate of 1 Gb/s.",
keywords = "3-D system integration, Inductive coupling, SiP, low power, wireless",
author = "Noriyuki Miura and Hiroki Ishikuro and Kiichi Niitsu and Takayasu Sakurai and Tadahiro Kuroda",
note = "Funding Information: Manuscript received July 18, 2007; revised October 17, 2007. This work was supported by Core Research for Evolutional Science and Technology and Japan Science and Technology Corporation (CREST/JST). The 180 nm CMOS VLSI chip was fabricated by Taiwan Semiconductor Manufacturing Company (TSMC). The 90 nm CMOS VLSI chip was fabricated through the chip fabrication program of VDEC, the University of Tokyo, with the collaboration by STARC, Fujitsu Ltd., Matsushita Electric Industrial Company Ltd., NEC Electronics Corporation, Renesas Technology Corporation, and Toshiba Corporation.",
year = "2008",
month = jan,
doi = "10.1109/JSSC.2007.914716",
language = "English",
volume = "43",
pages = "285--291",
journal = "IEEE Journal of Solid-State Circuits",
issn = "0018-9200",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "1",
}