TY - GEN
T1 - A 0.5V 1.1MS/sec 6.3fJ/conversion-step SAR-ADC with tri-level comparator in 40nm CMOS
AU - Shikata, Akira
AU - Sekimoto, Ryota
AU - Kuroda, Tadahiro
AU - Ishikuro, Hiroki
PY - 2011/9/16
Y1 - 2011/9/16
N2 - This paper presents an extremely low-voltage operation and power efficient successive-approximation-register (SAR) analog-to-digital converter (ADC). Tri-level comparator is proposed to relax the speed requirement of the comparator and decrease the resolution of internal Digital-to-Analog Converter (DAC) by 1-bit. The internal DAC employs unit capacitance of 0.5fF and ADC operates at nearly thermal noise limitation. To deal with the problem of capacitor mismatch, reconfigurable capacitor array and calibration procedure were developed. The prototype ADC fabricated using 40nm CMOS process achieves 46.8dB SNDR with 1.1MS/sec at 0.5V power supply. The FoM is 6.3-fJ/conversion step.
AB - This paper presents an extremely low-voltage operation and power efficient successive-approximation-register (SAR) analog-to-digital converter (ADC). Tri-level comparator is proposed to relax the speed requirement of the comparator and decrease the resolution of internal Digital-to-Analog Converter (DAC) by 1-bit. The internal DAC employs unit capacitance of 0.5fF and ADC operates at nearly thermal noise limitation. To deal with the problem of capacitor mismatch, reconfigurable capacitor array and calibration procedure were developed. The prototype ADC fabricated using 40nm CMOS process achieves 46.8dB SNDR with 1.1MS/sec at 0.5V power supply. The FoM is 6.3-fJ/conversion step.
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M3 - Conference contribution
AN - SCOPUS:80052678511
SN - 9784863481657
T3 - IEEE Symposium on VLSI Circuits, Digest of Technical Papers
SP - 262
EP - 263
BT - 2011 Symposium on VLSI Circuits, VLSIC 2011 - Digest of Technical Papers
T2 - 2011 Symposium on VLSI Circuits, VLSIC 2011
Y2 - 15 June 2011 through 17 June 2011
ER -