A 1.5 Gbit/s GaAs Four-Channel Selector LSI with Monolithically Integrated Newly Structured GaAs Ohmic Contact MSM Photodetector and Laser Driver

Naoaki Yamanaka; Tohru Takada

doi:10.1109/68.43358

A 1.5 Gbit/s GaAs Four-Channel Selector LSI with Monolithically Integrated Newly Structured GaAs Ohmic Contact MSM Photodetector and Laser Driver

Naoaki Yamanaka, Tohru Takada

研究成果: Article › 査読

6 被引用数 (Scopus)

抄録

A monolithic integrated 1.5 Gbit/s high-speed four-channel OEIC selector GaAs LSI has been fabricated. This LSI incorporates photodetectors, preamplifiers, a selector, a decision circuit, and a high-speed laser driver. To achieve high efficiency, a AuGe/Ni-GaAs structured ohmic contact metal-semiconductor-metal (OC-MSM) is used for the interdigitated structural photodetector. With this OC-MSM structure, photocurrent is approximately twice as effective as with the conventional Schottky contact MSM structure. The new LSI has a maximum operating speed of 1.5 Gbit/s and exhibits low power dissipation of 927 mW.

本文言語	English
ページ（範囲）	310-312
ページ数	3
ジャーナル	IEEE Photonics Technology Letters
巻	1
号	10
DOI	https://doi.org/10.1109/68.43358
出版ステータス	Published - 1989 10月
外部発表	はい

ASJC Scopus subject areas

電子材料、光学材料、および磁性材料
原子分子物理学および光学
電子工学および電気工学

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10.1109/68.43358

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引用スタイル

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