A 20-Gb/s simultaneous bidirectional transceiver using a resistor-transconductor hybrid in 0.11-μm CMOS

Yasumoto Tomita; Hirotaka Tamura; Masaya Kibune; Junji Ogawa; Kohtaro Gotoh; Tadahiro Kuroda

doi:10.1109/JSSC.2006.891719

A 20-Gb/s simultaneous bidirectional transceiver using a resistor-transconductor hybrid in 0.11-μm CMOS

Yasumoto Tomita, Hirotaka Tamura, Masaya Kibune, Junji Ogawa, Kohtaro Gotoh, Tadahiro Kuroda

研究成果: Article › 査読

31 被引用数 (Scopus)

抄録

This paper presents a 20-Gb/s simultaneous bidirectional transceiver using a resistor-transconductor (R-gm) hybrid in standard 0.11-μm CMOS. The R-gm hybrid separates the inbound signal from the signal line voltage and current without using a replica driver. It eliminates the need for precise matching between the replica- and main-driver characteristics, enabling a data rate of 20 Gb/s per differential pair, which is the highest reported for bidirectional signaling. The transceiver occupies 1.02 mm² and consumes 260 mW at 20 Gb/s with a bit error rate of less than 10^-12. The area and power overhead due to the hybrid are 0.002 mm² and 7 mW, and correspond to 0.2% and 3% of the total transceiver area and power consumption.

本文言語	English
ページ（範囲）	627-636
ページ数	10
ジャーナル	IEEE Journal of Solid-State Circuits
巻	42
号	3
DOI	https://doi.org/10.1109/JSSC.2006.891719
出版ステータス	Published - 2007 3月
外部発表	はい

ASJC Scopus subject areas

電子工学および電気工学

文献へのアクセス

10.1109/JSSC.2006.891719

他のファイルとリンク

引用スタイル

@article{02c9dd5ffc4842a68d5b453acb3d2c36,

title = "A 20-Gb/s simultaneous bidirectional transceiver using a resistor-transconductor hybrid in 0.11-μm CMOS",

abstract = "This paper presents a 20-Gb/s simultaneous bidirectional transceiver using a resistor-transconductor (R-gm) hybrid in standard 0.11-μm CMOS. The R-gm hybrid separates the inbound signal from the signal line voltage and current without using a replica driver. It eliminates the need for precise matching between the replica- and main-driver characteristics, enabling a data rate of 20 Gb/s per differential pair, which is the highest reported for bidirectional signaling. The transceiver occupies 1.02 mm2 and consumes 260 mW at 20 Gb/s with a bit error rate of less than 10-12. The area and power overhead due to the hybrid are 0.002 mm2 and 7 mW, and correspond to 0.2% and 3% of the total transceiver area and power consumption.",

keywords = "Bidirectional, CMOS, Hybrid, Low-power, Transceiver",

author = "Yasumoto Tomita and Hirotaka Tamura and Masaya Kibune and Junji Ogawa and Kohtaro Gotoh and Tadahiro Kuroda",

note = "Funding Information: Manuscript received June 15, 2006; revised October 30, 2006. This work is supported in part by a Grant in Aid for the 21st Century Center of Excellence for Optical and Electronic Device Technology for Access Network from the Ministry of Education, Culture, Sport, Science, and Technology in Japan.",

year = "2007",

month = mar,

doi = "10.1109/JSSC.2006.891719",

language = "English",

volume = "42",

pages = "627--636",

journal = "IEEE Journal of Solid-State Circuits",

issn = "0018-9200",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "3",

}

TY - JOUR

T1 - A 20-Gb/s simultaneous bidirectional transceiver using a resistor-transconductor hybrid in 0.11-μm CMOS

AU - Tomita, Yasumoto

AU - Tamura, Hirotaka

AU - Kibune, Masaya

AU - Ogawa, Junji

AU - Gotoh, Kohtaro

AU - Kuroda, Tadahiro

N1 - Funding Information: Manuscript received June 15, 2006; revised October 30, 2006. This work is supported in part by a Grant in Aid for the 21st Century Center of Excellence for Optical and Electronic Device Technology for Access Network from the Ministry of Education, Culture, Sport, Science, and Technology in Japan.

PY - 2007/3

Y1 - 2007/3

N2 - This paper presents a 20-Gb/s simultaneous bidirectional transceiver using a resistor-transconductor (R-gm) hybrid in standard 0.11-μm CMOS. The R-gm hybrid separates the inbound signal from the signal line voltage and current without using a replica driver. It eliminates the need for precise matching between the replica- and main-driver characteristics, enabling a data rate of 20 Gb/s per differential pair, which is the highest reported for bidirectional signaling. The transceiver occupies 1.02 mm2 and consumes 260 mW at 20 Gb/s with a bit error rate of less than 10-12. The area and power overhead due to the hybrid are 0.002 mm2 and 7 mW, and correspond to 0.2% and 3% of the total transceiver area and power consumption.

AB - This paper presents a 20-Gb/s simultaneous bidirectional transceiver using a resistor-transconductor (R-gm) hybrid in standard 0.11-μm CMOS. The R-gm hybrid separates the inbound signal from the signal line voltage and current without using a replica driver. It eliminates the need for precise matching between the replica- and main-driver characteristics, enabling a data rate of 20 Gb/s per differential pair, which is the highest reported for bidirectional signaling. The transceiver occupies 1.02 mm2 and consumes 260 mW at 20 Gb/s with a bit error rate of less than 10-12. The area and power overhead due to the hybrid are 0.002 mm2 and 7 mW, and correspond to 0.2% and 3% of the total transceiver area and power consumption.

KW - Bidirectional

KW - CMOS

KW - Hybrid

KW - Low-power

KW - Transceiver

UR - http://www.scopus.com/inward/record.url?scp=33847749277&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33847749277&partnerID=8YFLogxK

U2 - 10.1109/JSSC.2006.891719

DO - 10.1109/JSSC.2006.891719

M3 - Article

AN - SCOPUS:33847749277

SN - 0018-9200

VL - 42

SP - 627

EP - 636

JO - IEEE Journal of Solid-State Circuits

JF - IEEE Journal of Solid-State Circuits

IS - 3

ER -

A 20-Gb/s simultaneous bidirectional transceiver using a resistor-transconductor hybrid in 0.11-μm CMOS

抄録

ASJC Scopus subject areas

文献へのアクセス

他のファイルとリンク

フィンガープリント

引用スタイル