抄録
Lateral mode coupling in a diode-pumped Nd: YAG microchip laser array is demonstrated with a Talbot cavity for the first time. The relatively low laser gains of solid-state lasers compared with diode lasers and CO2 lasers, to which the Talbot cavity has already been applied successfully, are solved by employing a novel auxiliary Talbot cavity configuration. A brighter twin-peak far-field pattern indicating an out-of-phase array mode, whose spot is 9.3 times smaller than that obtained by incoherent superposition of the individual microchip laser outputs, is obtained from the phase-locked microchip laser array with a mode-selecting slit. Without the mode-selecting slit, a far-field pattern with a single narrow peak is obtained, showing that the array is locked in an in-phase mode, presumably because of multiple reflections in the auxiliary Talbot cavity.
本文言語 | English |
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ページ(範囲) | 607-614 |
ページ数 | 8 |
ジャーナル | IEEE Journal of Quantum Electronics |
巻 | 36 |
号 | 5 |
DOI | |
出版ステータス | Published - 2000 5月 |
ASJC Scopus subject areas
- 原子分子物理学および光学
- 凝縮系物理学
- 電子工学および電気工学