A Raman scattering study of self-assembled pure isotope Ge/Si(100) quantum dots

A. V. Kolobov, K. Morita, K. M. Itoh, E. E. Haller

研究成果: Article査読

27 被引用数 (Scopus)

抄録

The self-assembled pure isotope Ge/Si(100) quantum dots (QD) were studied using Raman scattering. It was shown that the intermixing in the QDs depends on the dot size, is stronger in smaller dots and the germanium rich area exists as a core of the dots. It was also shown that the amplitude of the Raman peak is not directly proportional to the number of the corresponding bonds in the sample.

本文言語English
ページ(範囲)3855-3857
ページ数3
ジャーナルApplied Physics Letters
81
20
DOI
出版ステータスPublished - 2002 11月 11

ASJC Scopus subject areas

  • 物理学および天文学(その他)

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