A review of SRAM-based compute-in-memory circuits

Kentaro Yoshioka, Shimpei Ando, Satomi Miyagi, Yung Chin Chen, Wenlun Zhang

研究成果: Review article査読

2 被引用数 (Scopus)

抄録

This paper presents a tutorial and review of Static Random Access Memory-based compute-in-memory (CIM) circuits, with a focus on both digital CIM (DCIM) and analog CIM (ACIM) implementations. We explore the fundamental concepts, architectures, and operational principles of CIM technology. The review compares DCIM and ACIM approaches, examining their respective advantages and challenges. DCIM offers high computational precision and process scaling benefits, while ACIM provides superior power and area efficiency, particularly for medium-precision applications. We analyze various ACIM implementations, including current-based, time-based, and charge-based approaches, with a detailed look at charge-based ACIMs. The paper also discusses emerging hybrid CIM architectures that combine DCIM and ACIM to leverage the strengths of both approaches.

本文言語English
論文番号120802
ジャーナルJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
63
12
DOI
出版ステータスPublished - 2024 12月 2

ASJC Scopus subject areas

  • 工学一般
  • 物理学および天文学一般

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