@article{ccfbb9349f7441d6802a5fd31351f708,
title = "A two-step process for growth of highly oriented Sb2Te3 using sputtering",
abstract = "A two-step growth method is proposed for the fabrication of highly-oriented Sb2Te3 and related superlattice films using sputtering. We report that the quality and grain size of Sb2Te3 as well as GeTe/Sb2Te3 superlattice films strongly depend on the thickness of the room-temperature deposited and subsequently by annealing at 523 K Sb2Te3 seed layer. This result may open up new possibilities for the fabrication of two-dimensional electronic devices using layered chalcogenides.",
author = "Yuta Saito and Paul Fons and Leonid Bolotov and Noriyuki Miyata and Kolobov, {Alexander V.} and Junji Tominaga",
note = "Funding Information: This research was supported by CREST, JST. A part of this work was conducted at the AIST Nano-Processing Facility, supported by Nanotechnology Platform Program of the Ministry of Education, Culture, Sports, Science and Technology (MEXT), Japan. Publisher Copyright: {\textcopyright} 2016 Author(s).",
year = "2016",
month = apr,
day = "1",
doi = "10.1063/1.4948536",
language = "English",
volume = "6",
journal = "AIP Advances",
issn = "2158-3226",
publisher = "American Institute of Physics Publising LLC",
number = "4",
}