All-optical on-chip bit memory based on ultra high Q InGaAsP photonic crystal

Akihiko Shinya; Shinji Matsuo; Yosia; Takasumi Tanabe; Eiichi Kuramochi; Tomonari Sato; Takaaki Kakitsuka; Masaya Notomi

doi:10.1364/OE.16.019382

All-optical on-chip bit memory based on ultra high Q InGaAsP photonic crystal

Akihiko Shinya, Shinji Matsuo, Yosia, Takasumi Tanabe, Eiichi Kuramochi, Tomonari Sato, Takaaki Kakitsuka, Masaya Notomi

研究成果: Article › 査読

85 被引用数 (Scopus)

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We demonstrate all-optical bit memory operation with photonic crystal (PhC) nanocavities based on an InGaAsP substrate with a band gap at a wavelength of about 1.3 μm. The optical bistability is based on a refractive index modulation caused by carrier-plasma dispersion. The operating energy required for switching is only 30 fJ, and the minimum optical bias power for bistability is 40 μW, which is about one hundred times less than that required for laser based bistable memories.

本文言語	English
ページ（範囲）	19382-19387
ページ数	6
ジャーナル	Optics Express
巻	16
号	23
DOI	https://doi.org/10.1364/OE.16.019382
出版ステータス	Published - 2008 11月 10
外部発表	はい

ASJC Scopus subject areas

原子分子物理学および光学

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@article{494988e813164aba9bc049c5837bd0d4,

title = "All-optical on-chip bit memory based on ultra high Q InGaAsP photonic crystal",

abstract = "We demonstrate all-optical bit memory operation with photonic crystal (PhC) nanocavities based on an InGaAsP substrate with a band gap at a wavelength of about 1.3 μm. The optical bistability is based on a refractive index modulation caused by carrier-plasma dispersion. The operating energy required for switching is only 30 fJ, and the minimum optical bias power for bistability is 40 μW, which is about one hundred times less than that required for laser based bistable memories.",

author = "Akihiko Shinya and Shinji Matsuo and Yosia and Takasumi Tanabe and Eiichi Kuramochi and Tomonari Sato and Takaaki Kakitsuka and Masaya Notomi",

year = "2008",

month = nov,

day = "10",

doi = "10.1364/OE.16.019382",

language = "English",

volume = "16",

pages = "19382--19387",

journal = "Optics Express",

issn = "1094-4087",

publisher = "The Optical Society",

number = "23",

}

TY - JOUR

T1 - All-optical on-chip bit memory based on ultra high Q InGaAsP photonic crystal

AU - Shinya, Akihiko

AU - Matsuo, Shinji

AU - Yosia,

AU - Tanabe, Takasumi

AU - Kuramochi, Eiichi

AU - Sato, Tomonari

AU - Kakitsuka, Takaaki

AU - Notomi, Masaya

PY - 2008/11/10

Y1 - 2008/11/10

N2 - We demonstrate all-optical bit memory operation with photonic crystal (PhC) nanocavities based on an InGaAsP substrate with a band gap at a wavelength of about 1.3 μm. The optical bistability is based on a refractive index modulation caused by carrier-plasma dispersion. The operating energy required for switching is only 30 fJ, and the minimum optical bias power for bistability is 40 μW, which is about one hundred times less than that required for laser based bistable memories.

AB - We demonstrate all-optical bit memory operation with photonic crystal (PhC) nanocavities based on an InGaAsP substrate with a band gap at a wavelength of about 1.3 μm. The optical bistability is based on a refractive index modulation caused by carrier-plasma dispersion. The operating energy required for switching is only 30 fJ, and the minimum optical bias power for bistability is 40 μW, which is about one hundred times less than that required for laser based bistable memories.

UR - http://www.scopus.com/inward/record.url?scp=56249105105&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=56249105105&partnerID=8YFLogxK

U2 - 10.1364/OE.16.019382

DO - 10.1364/OE.16.019382

M3 - Article

C2 - 19585709

AN - SCOPUS:56249105105

SN - 1094-4087

VL - 16

SP - 19382

EP - 19387

JO - Optics Express

JF - Optics Express

IS - 23

ER -

All-optical on-chip bit memory based on ultra high Q InGaAsP photonic crystal

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