Temperature dependence of amorphization processes in ion-implanted Si has been investigated using Raman spectroscopy together with cross-sectional transmission microscopy. The crystal Si Raman peak decreased and the amorphous Si (a-Si) peak became predominant as the substrate temperature was decreased from 23°C to -200°C. Based on the analysis of bond angle deviations derived from the a-Si peaks, we have proposed a model in which an accumulation of small vacancies induces amorphization at low temperatures, while larger vacancy complexes play an important role.
|Published - 1991
|23rd International Conference on Solid State Devices and Materials - SSDM '91 - Yokohama, Jpn
継続期間: 1991 8月 27 → 1991 8月 29
|23rd International Conference on Solid State Devices and Materials - SSDM '91
|91/8/27 → 91/8/29
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