Amorphization processes in ion implanted Si. Temperature dependence

T. Motooka; F. Kobayashi; P. Fons; T. Tokuyama; T. Suzuki; N. Natsuaki

Amorphization processes in ion implanted Si. Temperature dependence

T. Motooka, F. Kobayashi, P. Fons, T. Tokuyama, T. Suzuki, N. Natsuaki

研究成果: Paper › 査読

抄録

Temperature dependence of amorphization processes in ion-implanted Si has been investigated using Raman spectroscopy together with cross-sectional transmission microscopy. The crystal Si Raman peak decreased and the amorphous Si (a-Si) peak became predominant as the substrate temperature was decreased from 23°C to -200°C. Based on the analysis of bond angle deviations derived from the a-Si peaks, we have proposed a model in which an accumulation of small vacancies induces amorphization at low temperatures, while larger vacancy complexes play an important role.

本文言語	English
ページ	44-46
ページ数	3
出版ステータス	Published - 1991
外部発表	はい
イベント	23rd International Conference on Solid State Devices and Materials - SSDM '91 - Yokohama, Jpn 継続期間: 1991 8月 27 → 1991 8月 29

Conference

Conference	23rd International Conference on Solid State Devices and Materials - SSDM '91
City	Yokohama, Jpn
Period	91/8/27 → 91/8/29

ASJC Scopus subject areas

工学一般

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引用スタイル

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title = "Amorphization processes in ion implanted Si. Temperature dependence",

abstract = "Temperature dependence of amorphization processes in ion-implanted Si has been investigated using Raman spectroscopy together with cross-sectional transmission microscopy. The crystal Si Raman peak decreased and the amorphous Si (a-Si) peak became predominant as the substrate temperature was decreased from 23°C to -200°C. Based on the analysis of bond angle deviations derived from the a-Si peaks, we have proposed a model in which an accumulation of small vacancies induces amorphization at low temperatures, while larger vacancy complexes play an important role.",

author = "T. Motooka and F. Kobayashi and P. Fons and T. Tokuyama and T. Suzuki and N. Natsuaki",

year = "1991",

language = "English",

pages = "44--46",

note = "23rd International Conference on Solid State Devices and Materials - SSDM '91 ; Conference date: 27-08-1991 Through 29-08-1991",

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T1 - Amorphization processes in ion implanted Si. Temperature dependence

AU - Motooka, T.

AU - Kobayashi, F.

AU - Fons, P.

AU - Tokuyama, T.

AU - Suzuki, T.

AU - Natsuaki, N.

PY - 1991

Y1 - 1991

N2 - Temperature dependence of amorphization processes in ion-implanted Si has been investigated using Raman spectroscopy together with cross-sectional transmission microscopy. The crystal Si Raman peak decreased and the amorphous Si (a-Si) peak became predominant as the substrate temperature was decreased from 23°C to -200°C. Based on the analysis of bond angle deviations derived from the a-Si peaks, we have proposed a model in which an accumulation of small vacancies induces amorphization at low temperatures, while larger vacancy complexes play an important role.

AB - Temperature dependence of amorphization processes in ion-implanted Si has been investigated using Raman spectroscopy together with cross-sectional transmission microscopy. The crystal Si Raman peak decreased and the amorphous Si (a-Si) peak became predominant as the substrate temperature was decreased from 23°C to -200°C. Based on the analysis of bond angle deviations derived from the a-Si peaks, we have proposed a model in which an accumulation of small vacancies induces amorphization at low temperatures, while larger vacancy complexes play an important role.

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M3 - Paper

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T2 - 23rd International Conference on Solid State Devices and Materials - SSDM '91

Y2 - 27 August 1991 through 29 August 1991

ER -

Amorphization processes in ion implanted Si. Temperature dependence

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Conference

ASJC Scopus subject areas

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