This paper describes an integrated MOS magnetic sensor with chopper-stabilized amplifier. The integrated magnetic sensor has been fabricated using the standard n-channel E/D(enhancement/depletion) MOS process technology. A sensing element with a dual-source dual-drain structure in the MOSFET suitable for the chopper driving has been developed, and is called split-source-drain MAGFET. A depletion-mode structure is used for the MAGFET to reduce the 1/f noise by applying a negative gate bias voltage. The integration of the chopper-stabilized amplifier with the silicon magnetic sensor leads to a reduction of the 1/f noise, the offset, and the offset drift of the amplifier, as well as to an enhancement of the equivalent sensitivity. The integrated magnetic sensor has a sensitivity of 5.5 V/T and the resolution of about 50 μT with 1 kHz bandwidth.
|ジャーナル||Sensors and Materials|
|出版ステータス||Published - 1996 12月 1|
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