The temperature and output characteristics of a three-dimensional vector accelerometer using silicon on insulator (SOI) structure are studied theoretically, and compared with experimental results. The temperature coefficients of sensitivity and offset voltage (TCS and TCO) are related to some factors such as thermal residual stress, and are expressed numerically. Thermal stress analysis of the accelerometer has also been carried out with the finite-element method (FEM) simulation program ANSYS, and the influence of the thermal stress on the TCO is estimated with the obtained expressions. Experimental results agree well with these theoretical results. Design considerations that enable the accelerometer to have desirable characteristics are discussed with reference to the expressions and the results of FEM simulation.
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