Assessment of a Silicon Quantum Dot Spin Qubit Environment via Noise Spectroscopy

K. W. Chan, W. Huang, C. H. Yang, J. C.C. Hwang, B. Hensen, T. Tanttu, F. E. Hudson, K. M. Itoh, A. Laucht, A. Morello, A. S. Dzurak

研究成果: Article査読

81 被引用数 (Scopus)

抄録

Preserving coherence long enough to perform meaningful calculations is one of the major challenges on the pathway to large-scale quantum-computer implementations. Noise coupled in from the environment is the main factor contributing to decoherence but can be mitigated via engineering design and control solutions. However, this is possible only after acquisition of a thorough understanding of the dominant noise sources and their spectrum. In the work reported here, we use a silicon quantum dot spin qubit as a metrological device to study the noise environment experienced by the qubit. We compare the sensitivity of this qubit to electrical noise with that of an implanted silicon-donor qubit in the same environment and measurement setup. Our results show that, as expected, a quantum dot spin qubit is more sensitive to electrical noise than a donor spin qubit due to the larger Stark shift, and the noise-spectroscopy data show pronounced charge-noise contributions at intermediate frequencies (2-20 kHz).

本文言語English
論文番号044017
ジャーナルPhysical Review Applied
10
4
DOI
出版ステータスPublished - 2018 10月 5

ASJC Scopus subject areas

  • 物理学および天文学一般

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