TY - GEN
T1 - Atom switch technology for low-power nonvolatile logic application
AU - Tada, M.
AU - Sakamoto, T.
AU - Miyamura, M.
AU - Banno, N.
AU - Okamoto, K.
AU - Hada, H.
N1 - Publisher Copyright:
©Copyright 2014 by The Electrochemical Society.
PY - 2014
Y1 - 2014
N2 - This paper reports Atom switch technology featuring Cu nanometer-scale conducting bridge in a solid-electrolyte. The switch exhibits resistance-switching, which is originated from Cu electrolysis through the solid-electrolyte. Three types of device structure of Atom switches such as two-terminal device, Complementary Atom Switch (CAS) and Diode-inserted Complementary Atom Switch (DCAS) are reviewed with the object of the routing switch application to directly replace the conventional Complementary Metal-Oxide Semiconductor (CMOS) switch element, realizing the low-power, nonvolatile programmable logic.
AB - This paper reports Atom switch technology featuring Cu nanometer-scale conducting bridge in a solid-electrolyte. The switch exhibits resistance-switching, which is originated from Cu electrolysis through the solid-electrolyte. Three types of device structure of Atom switches such as two-terminal device, Complementary Atom Switch (CAS) and Diode-inserted Complementary Atom Switch (DCAS) are reviewed with the object of the routing switch application to directly replace the conventional Complementary Metal-Oxide Semiconductor (CMOS) switch element, realizing the low-power, nonvolatile programmable logic.
UR - https://www.scopus.com/pages/publications/84925261055
UR - https://www.scopus.com/pages/publications/84925261055#tab=citedBy
U2 - 10.1149/06106.0057ecst
DO - 10.1149/06106.0057ecst
M3 - Conference contribution
AN - SCOPUS:84925261055
T3 - ECS Transactions
SP - 57
EP - 64
BT - International Symposium on Functional Diversification of Semiconductor Electronics 2 (More-Than-Moore 2)
A2 - Hiramoto, T.
A2 - Hesketh, P.
A2 - Srinivasan, P.
A2 - Hoff, A.
A2 - Obeng, Y.
PB - Electrochemical Society Inc.
T2 - International Symposium on Functional Diversification of Semiconductor Electronics 2 - 225th ECS Meeting
Y2 - 11 May 2014 through 15 May 2014
ER -