This brief proposes a new crystalline-Si (c-Si) solar cell structure, based on bifacial back-contact and carrier-selective contact solar cell technology. The proposed device, known as back-contact interdigitated carrier selective (BICS), offers the advantage of using existing c-Si solar cell structures. The bifaciality provided by the passivated emitter and rear cell (PERC), back-contact provided by interdigitated back contact (IBC), and carrier-selective contact provided by tunnel oxide passivated contact (TOPCon) are featured simultaneously. The local and full TOPCons are, respectively, applied to the emitter and back surface field (BSF) region. The proposed device has an output density of over 30 mW/cm2 under standard conditions-room temperature with a 20% albedo condition. A comparison with our previously proposed bifacial solar cell, heterojunction back contact (HBC)+, reveals the advantages of the proposed device. The proposed device is operable under a relatively low temperature under 45 °C, whereas HBC+ is suitable for higher temperatures. Therefore, the choice between the proposed device and HBC+ should be based on the climate of the installation location.
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