TY - JOUR
T1 - Bandgap engineering of ZnO transparent conducting films
AU - Matsubara, K.
AU - Tampo, H.
AU - Yamada, A.
AU - Fons, P.
AU - Iwata, K.
AU - Sakurai, K.
AU - Niki, S.
PY - 2003/1/1
Y1 - 2003/1/1
N2 - Low resistivity and transparent Al doped ZnMgO films were deposited on glass substrates by a pulsed laser deposition system. For up to 32 atm% of Mg content, segregation of a MgO phase was not observed. The bandgap of these films could be widened to about 4 eV with increasing Mg content. The relation between bandgap and resistivity was found to be a trade-off; i.e. the larger the bandgap, the higher the resistivity. The maximum bandgap among films with an electrical resistivity of less than 10-3 Ω cm was 3.94 eV. The average optical transmittance of these films was more than 90 % for wavelengths λ between 400 and 1100 nm. The transmittance around λ = 330 nm was still 50 %.
AB - Low resistivity and transparent Al doped ZnMgO films were deposited on glass substrates by a pulsed laser deposition system. For up to 32 atm% of Mg content, segregation of a MgO phase was not observed. The bandgap of these films could be widened to about 4 eV with increasing Mg content. The relation between bandgap and resistivity was found to be a trade-off; i.e. the larger the bandgap, the higher the resistivity. The maximum bandgap among films with an electrical resistivity of less than 10-3 Ω cm was 3.94 eV. The average optical transmittance of these films was more than 90 % for wavelengths λ between 400 and 1100 nm. The transmittance around λ = 330 nm was still 50 %.
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U2 - 10.1557/proc-763-b7.2
DO - 10.1557/proc-763-b7.2
M3 - Conference article
AN - SCOPUS:0344927743
SN - 0272-9172
VL - 763
SP - 295
EP - 299
JO - Materials Research Society Symposium - Proceedings
JF - Materials Research Society Symposium - Proceedings
T2 - MATERIALS RESEARCH SOCIETY SYMPOSIUM - PROCEEDINGS: Compound Semiconductor Photovoltaics
Y2 - 22 April 2003 through 25 April 2003
ER -