TY - JOUR
T1 - Bounds to electron spin qubit variability for scalable CMOS architectures
AU - Cifuentes, Jesús D.
AU - Tanttu, Tuomo
AU - Gilbert, Will
AU - Huang, Jonathan Y.
AU - Vahapoglu, Ensar
AU - Leon, Ross C.C.
AU - Serrano, Santiago
AU - Otter, Dennis
AU - Dunmore, Daniel
AU - Mai, Philip Y.
AU - Schlattner, Frédéric
AU - Feng, Meng Ke
AU - Itoh, Kohei
AU - Abrosimov, Nikolay
AU - Pohl, Hans Joachim
AU - Thewalt, Michael
AU - Laucht, Arne
AU - Yang, Chih Hwan
AU - Escott, Christopher C.
AU - Lim, Wee Han
AU - Hudson, Fay E.
AU - Rahman, Rajib
AU - Dzurak, Andrew S.
AU - Saraiva, Andre
N1 - Publisher Copyright:
© The Author(s) 2024.
PY - 2024/12
Y1 - 2024/12
N2 - Spins of electrons in silicon MOS quantum dots combine exquisite quantum properties and scalable fabrication. In the age of quantum technology, however, the metrics that crowned Si/SiO2 as the microelectronics standard need to be reassessed with respect to their impact upon qubit performance. We chart spin qubit variability due to the unavoidable atomic-scale roughness of the Si/SiO2 interface, compiling experiments across 12 devices, and develop theoretical tools to analyse these results. Atomistic tight binding and path integral Monte Carlo methods are adapted to describe fluctuations in devices with millions of atoms by directly analysing their wavefunctions and electron paths instead of their energy spectra. We correlate the effect of roughness with the variability in qubit position, deformation, valley splitting, valley phase, spin-orbit coupling and exchange coupling. These variabilities are found to be bounded, and they lie within the tolerances for scalable architectures for quantum computing as long as robust control methods are incorporated.
AB - Spins of electrons in silicon MOS quantum dots combine exquisite quantum properties and scalable fabrication. In the age of quantum technology, however, the metrics that crowned Si/SiO2 as the microelectronics standard need to be reassessed with respect to their impact upon qubit performance. We chart spin qubit variability due to the unavoidable atomic-scale roughness of the Si/SiO2 interface, compiling experiments across 12 devices, and develop theoretical tools to analyse these results. Atomistic tight binding and path integral Monte Carlo methods are adapted to describe fluctuations in devices with millions of atoms by directly analysing their wavefunctions and electron paths instead of their energy spectra. We correlate the effect of roughness with the variability in qubit position, deformation, valley splitting, valley phase, spin-orbit coupling and exchange coupling. These variabilities are found to be bounded, and they lie within the tolerances for scalable architectures for quantum computing as long as robust control methods are incorporated.
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U2 - 10.1038/s41467-024-48557-x
DO - 10.1038/s41467-024-48557-x
M3 - Article
C2 - 38769086
AN - SCOPUS:85193808456
SN - 2041-1723
VL - 15
JO - Nature communications
JF - Nature communications
IS - 1
M1 - 4299
ER -