TY - GEN
T1 - Carrier transport and stress engineering in advanced nanoscale MOS transistors
AU - Uchida, Ken
AU - Saitoh, Masumi
PY - 2009
Y1 - 2009
N2 - This paper reviews the carrier transport mechanisms and stress engineering in advanced nanoscale MOSFETs. First, carrier transport in bulk (100) and (110) MOSFETs is reviewed. Subband structure engineering to enhance mobility as well as ballistic current is also examined.
AB - This paper reviews the carrier transport mechanisms and stress engineering in advanced nanoscale MOSFETs. First, carrier transport in bulk (100) and (110) MOSFETs is reviewed. Subband structure engineering to enhance mobility as well as ballistic current is also examined.
UR - http://www.scopus.com/inward/record.url?scp=77950110712&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=77950110712&partnerID=8YFLogxK
U2 - 10.1109/VTSA.2009.5159267
DO - 10.1109/VTSA.2009.5159267
M3 - Conference contribution
AN - SCOPUS:77950110712
SN - 9781424427857
T3 - International Symposium on VLSI Technology, Systems, and Applications, Proceedings
SP - 6
EP - 7
BT - 2009 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA '09
T2 - 2009 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA '09
Y2 - 27 April 2009 through 29 April 2009
ER -