Carrier transport in (110) nMOSFETs: Subband structures, non-parabolicity, mobility characteristics, and uniaxial stress engineering

Ken Uchida; Atsuhiro Kinoshita; Masumi Saitoh

doi:10.1109/IEDM.2006.346943

Carrier transport in (110) nMOSFETs: Subband structures, non-parabolicity, mobility characteristics, and uniaxial stress engineering

Ken Uchida, Atsuhiro Kinoshita, Masumi Saitoh

研究成果: Conference contribution

本文言語	English
ホスト出版物のタイトル	2006 International Electron Devices Meeting Technical Digest, IEDM
DOI	https://doi.org/10.1109/IEDM.2006.346943
出版ステータス	Published - 2006
外部発表	はい
イベント	2006 International Electron Devices Meeting, IEDM - San Francisco, CA, United States 継続期間: 2006 12月 10 → 2006 12月 13

出版物シリーズ

名前	Technical Digest - International Electron Devices Meeting, IEDM
ISSN（印刷版）	0163-1918

Other

Other	2006 International Electron Devices Meeting, IEDM
国/地域	United States
City	San Francisco, CA
Period	06/12/10 → 06/12/13

ASJC Scopus subject areas

電子材料、光学材料、および磁性材料
凝縮系物理学
電子工学および電気工学
材料化学

文献へのアクセス

10.1109/IEDM.2006.346943

他のファイルとリンク

引用スタイル

Uchida, K., Kinoshita, A., & Saitoh, M. (2006). Carrier transport in (110) nMOSFETs: Subband structures, non-parabolicity, mobility characteristics, and uniaxial stress engineering. In 2006 International Electron Devices Meeting Technical Digest, IEDM Article 4154378 (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM.2006.346943

Carrier transport in (110) nMOSFETs: Subband structures, non-parabolicity, mobility characteristics, and uniaxial stress engineering. / Uchida, Ken; Kinoshita, Atsuhiro; Saitoh, Masumi.
2006 International Electron Devices Meeting Technical Digest, IEDM. 2006. 4154378 (Technical Digest - International Electron Devices Meeting, IEDM).

研究成果: Conference contribution

Uchida, K, Kinoshita, A & Saitoh, M 2006, Carrier transport in (110) nMOSFETs: Subband structures, non-parabolicity, mobility characteristics, and uniaxial stress engineering. in 2006 International Electron Devices Meeting Technical Digest, IEDM., 4154378, Technical Digest - International Electron Devices Meeting, IEDM, 2006 International Electron Devices Meeting, IEDM, San Francisco, CA, United States, 06/12/10. https://doi.org/10.1109/IEDM.2006.346943

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