Cathodoluminescence study of InGaAs/GaAs quantum dot structures formed on the tetrahedral-shaped recesses on GaAs (111)B substrates

Takashi Sekiguchi, Yoshiki Sakuma, Yuji Awano, Naoki Yokoyama

研究成果: Article査読

12 被引用数 (Scopus)

抄録

InGaAs/GaAs quantum dot (QD) structures grown in tetrahedral-shaped recesses (TSR) etched into GaAs (111)B substrates are studied by means of cathodoluminescence (CL). Two main features are observed in the CL spectra. The lower energetic peak can be assigned to QDs in the bottom of the TSRs, while the higher energetic one corresponds to the quantum wells (QWs) formed at the sides of the TSRs. This can be confirmed by spatially resolved CL imaging. The behavior of QD and QW luminescence is studied by temperature and electron beam intensity dependence of CL. We will show that the formation of the QDs is strongly dependent on the size and the spacing of the TSRs.

本文言語English
ページ(範囲)4944-4950
ページ数7
ジャーナルJournal of Applied Physics
83
9
DOI
出版ステータスPublished - 1998 5月 1
外部発表はい

ASJC Scopus subject areas

  • 物理学および天文学一般

フィンガープリント

「Cathodoluminescence study of InGaAs/GaAs quantum dot structures formed on the tetrahedral-shaped recesses on GaAs (111)B substrates」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル