TY - JOUR
T1 - Characteristic Control of n-Channel Organic Thin-Film Transistors Using a Dimethyl-Substituted Benzimidazole Dopant
AU - Noda, Kei
AU - Hiruma, Yuki
AU - Yoshihashi, Yuji
AU - Uebe, Masashi
AU - Ito, Akihiro
N1 - Funding Information:
The authors are very thankful to Mr. Masayuki Matsubara (Kyoto University) for his cooperation on the synthesis of n-type dopants. Some parts of the quantum chemical calculations were carried out at the Research Center for Computational Science in Okazaki (Japan) and the Supercomputer System of Kyoto University (Japan). The authors also gratefully acknowledge the support of the Project of International Standards Development on Energy Conservation of Ministry of Economy, Trade, and Industry of Japan (METI).
Publisher Copyright:
© 2021 American Chemical Society
PY - 2021/12/28
Y1 - 2021/12/28
N2 - 4-(N,N-Dimethylamino)phenyl-substituted 1,3-dimethyl-2,3-dihydro-1H-benzimidazole (N-DMBI-H) has been utilized as a solution-processable n-type dopant in organic electronics. In this study, a dimethyl-substituted N-DMBI-H derivative (DMe-N-DMBI-H), in which two methyl groups are attached at the terminal 5- and 6-positions of the benzimidazole moiety of N-DMBI-H molecule, has been examined to control its electron-donating ability. The effectiveness of DMe-N-DMBI-H as a solution-processable donor dopant has been clarified by evaluating electrical characteristics of DMe-N-DMBI-H-doped PCBM ([6,6]-phenyl-C61-butyric acid methyl ester) thin-film transistors, such as field-effect mobility, gate threshold voltage, and contact resistance. Our electrochemical and electrical characterizations as well as quantum chemical calculations have suggested that DMe-N-DMBI-H works as a donor dopant somewhat stronger than N-DMBI-H.
AB - 4-(N,N-Dimethylamino)phenyl-substituted 1,3-dimethyl-2,3-dihydro-1H-benzimidazole (N-DMBI-H) has been utilized as a solution-processable n-type dopant in organic electronics. In this study, a dimethyl-substituted N-DMBI-H derivative (DMe-N-DMBI-H), in which two methyl groups are attached at the terminal 5- and 6-positions of the benzimidazole moiety of N-DMBI-H molecule, has been examined to control its electron-donating ability. The effectiveness of DMe-N-DMBI-H as a solution-processable donor dopant has been clarified by evaluating electrical characteristics of DMe-N-DMBI-H-doped PCBM ([6,6]-phenyl-C61-butyric acid methyl ester) thin-film transistors, such as field-effect mobility, gate threshold voltage, and contact resistance. Our electrochemical and electrical characterizations as well as quantum chemical calculations have suggested that DMe-N-DMBI-H works as a donor dopant somewhat stronger than N-DMBI-H.
KW - benzimidazole derivative
KW - electrochemical analysis
KW - n-type doping
KW - organic semiconductors
KW - organic thin-film transistors
KW - quantum chemical calculations
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U2 - 10.1021/acsaelm.1c00801
DO - 10.1021/acsaelm.1c00801
M3 - Article
AN - SCOPUS:85120992852
SN - 2637-6113
VL - 3
SP - 5296
EP - 5306
JO - ACS Applied Electronic Materials
JF - ACS Applied Electronic Materials
IS - 12
ER -