Characteristics of oriented LaNiO3 thin films fabricated by the sol-gel method

Shinichi Miyake, Shinobu Fujihara, Toshio Kimura

研究成果: Article査読

55 被引用数 (Scopus)

抄録

We fabricated LaNiO3 (LNO) thin films on SiO2 glass, (100) SrTiO3 (STO), (100) Si and CeO2-covered (100) Si substrates by the sol-gel method. The deposited films were heat-treated at 700°C with various conditions, duration and atmosphere. Preferentially (100)-oriented, polycrystalline LNO films were obtained on STO and Si. It was also found that orientated films could be formed even on SiO2 glass and CeO2-covered (100) Si substrates by altering the heating process. We investigated a relationship between the resistance and the crystallite size of the LNO films. The sheet resistance of LNO decreased with increasing crystallite size of LNO. The resistivity and sheet resistance of LNO/STO at 300 K were 340 μ Ω-cm and 33.8 Ω/, respectively, and those values of LNO/CeO2/Si at 300 K were 460 μΩ-cm and 28.8 Ω/.

本文言語English
ページ(範囲)1525-1528
ページ数4
ジャーナルJournal of the European Ceramic Society
21
10-11
DOI
出版ステータスPublished - 2001 8月 31

ASJC Scopus subject areas

  • セラミックおよび複合材料
  • 材料化学

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