Characterization of oxygen impurities in thermally evaporated LaF                          3                          thin films suitable for oxygen sensor

M. Vijayakumar; S. Selvasekarapandian; T. Gnanasekaran; Shinobu Fujihara; Shinnosuke Koji

doi:10.1016/j.apsusc.2003.08.002

Characterization of oxygen impurities in thermally evaporated LaF ₃ thin films suitable for oxygen sensor

M. Vijayakumar
, S. Selvasekarapandian
, T. Gnanasekaran
, Shinobu Fujihara
, Shinnosuke Koji

応用化学科

研究成果: Article › 査読

25 被引用数 (Scopus)

抄録

The lanthanum fluoride thin films has been prepared by means of thermal evaporation method. The XRD analysis shows the formation of polycrystalline hexagonal LaF ₃ . The depth profile X-ray photoelectron spectroscopy (XPS) analysis shows the presence of oxide ions throughout the films. The formation of lanthanum oxyfluoride (LaOF) has been identified. The [O]/[F] ratio has been found to be 0.35 which is higher than the previously reported values of LaF ₃ film applied for the oxygen sensor.

本文言語	English
ページ（範囲）	125-130
ページ数	6
ジャーナル	Applied Surface Science
巻	222
号	1-4
DOI	https://doi.org/10.1016/j.apsusc.2003.08.002
出版ステータス	Published - 2004 1月 30

ASJC Scopus subject areas

化学一般
凝縮系物理学
物理学および天文学一般
表面および界面
表面、皮膜および薄膜

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10.1016/j.apsusc.2003.08.002

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引用スタイル

Vijayakumar, M., Selvasekarapandian, S., Gnanasekaran, T., Fujihara, S., & Koji, S. (2004). Characterization of oxygen impurities in thermally evaporated LaF ₃ thin films suitable for oxygen sensor Applied Surface Science, 222(1-4), 125-130. https://doi.org/10.1016/j.apsusc.2003.08.002

Characterization of oxygen impurities in thermally evaporated LaF ₃ thin films suitable for oxygen sensor . / Vijayakumar, M.; Selvasekarapandian, S.; Gnanasekaran, T. その他.
In: Applied Surface Science, Vol. 222, No. 1-4, 30.01.2004, p. 125-130.

研究成果: Article › 査読

Vijayakumar, M, Selvasekarapandian, S, Gnanasekaran, T, Fujihara, S & Koji, S 2004, ' Characterization of oxygen impurities in thermally evaporated LaF ₃ thin films suitable for oxygen sensor ', Applied Surface Science, vol. 222, no. 1-4, pp. 125-130. https://doi.org/10.1016/j.apsusc.2003.08.002

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title = " Characterization of oxygen impurities in thermally evaporated LaF 3 thin films suitable for oxygen sensor ",

abstract = " The lanthanum fluoride thin films has been prepared by means of thermal evaporation method. The XRD analysis shows the formation of polycrystalline hexagonal LaF 3 . The depth profile X-ray photoelectron spectroscopy (XPS) analysis shows the presence of oxide ions throughout the films. The formation of lanthanum oxyfluoride (LaOF) has been identified. The [O]/[F] ratio has been found to be 0.35 which is higher than the previously reported values of LaF 3 film applied for the oxygen sensor.",

keywords = "LaF, Oxygen sensor, XPS analysis, XRD analysis",

author = "M. Vijayakumar and S. Selvasekarapandian and T. Gnanasekaran and Shinobu Fujihara and Shinnosuke Koji",

year = "2004",

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AU - Vijayakumar, M.

AU - Selvasekarapandian, S.

AU - Gnanasekaran, T.

AU - Fujihara, Shinobu

AU - Koji, Shinnosuke

PY - 2004/1/30

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N2 - The lanthanum fluoride thin films has been prepared by means of thermal evaporation method. The XRD analysis shows the formation of polycrystalline hexagonal LaF 3 . The depth profile X-ray photoelectron spectroscopy (XPS) analysis shows the presence of oxide ions throughout the films. The formation of lanthanum oxyfluoride (LaOF) has been identified. The [O]/[F] ratio has been found to be 0.35 which is higher than the previously reported values of LaF 3 film applied for the oxygen sensor.

AB - The lanthanum fluoride thin films has been prepared by means of thermal evaporation method. The XRD analysis shows the formation of polycrystalline hexagonal LaF 3 . The depth profile X-ray photoelectron spectroscopy (XPS) analysis shows the presence of oxide ions throughout the films. The formation of lanthanum oxyfluoride (LaOF) has been identified. The [O]/[F] ratio has been found to be 0.35 which is higher than the previously reported values of LaF 3 film applied for the oxygen sensor.

KW - LaF

KW - Oxygen sensor

KW - XPS analysis

KW - XRD analysis

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JO - Applied Surface Science

JF - Applied Surface Science

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Characterization of oxygen impurities in thermally evaporated LaF 3 thin films suitable for oxygen sensor

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ASJC Scopus subject areas

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Characterization of oxygen impurities in thermally evaporated LaF ₃ thin films suitable for oxygen sensor