Characterization of precisely width-controlled Si quantum wires fabricated on SOI substrates

T. Hiramoto, H. Ishikuro, T. Fujii, T. Saraya, G. Hashiguchi, T. Ikoma

研究成果: Article査読

8 被引用数 (Scopus)

抄録

Silicon quantum wire structures with precisely controlled widths have been successfully fabricated on an SOI substrate by an anisotropic etching technique. The width of the wires does not depend on the lithography limit but solely on the thickness of the Si film of the SOI substrate. It is demonstrated that the wires are straight even if the lithography patterns are fluctuated. The minimum width is estimated to be less than 10 nm. This technique has been applied to fabricating a quantum wire FET, which shows fine peaks in drain current as a function of the gate voltage at low temperatures due to the Coulomb blockade of the single electron tunneling. The oscillations remain even at room temperature.

本文言語English
ページ(範囲)95-97
ページ数3
ジャーナルPhysica B: Condensed Matter
227
1-4
DOI
出版ステータスPublished - 1996 9月
外部発表はい

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学
  • 電子工学および電気工学

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