Comparison of self-heating effect (SHE) in short-channel bulk and ultra-thin BOX SOI MOSFETs: Impacts of doped well, ambient temperature, and SOI/BOX thicknesses on SHE

Tsunaki Takahashi, Takeo Matsuki, Takahiro Shinada, Yasuo Inoue, Ken Uchida

    研究成果: Conference contribution

    23 被引用数 (Scopus)

    抄録

    Self-heating effects (SHEs) of bulk and SOI FETs including 6-nm ultra-thin (UT) BOX devices are systematically investigated and compared using the four-terminal gate resistance technique. For bulk FETs, it has been verified for the first time that the SHE is not negligible in nanoscale devices mainly owing to a decrease in the thermal conductivity of the more heavily doped well. Furthermore, it has been demonstrated that the magnitude of the SHE strongly depends on the chip (ambient) temperature (Tchip). For SOI FETs, the impacts of BOX/SOI thinning are evaluated and explained in terms of the thermal conductivities of materials within heat dissipation paths. It has been demonstrated that the device temperature of 6-nm UT BOX SOI FETs is close to that of bulk FETs at Tchip under operating conditions. A thermal-aware device design of the UT Body and BOX (UTBB) structure is proposed on the basis of the evaluated BOX/SOI thickness dependences of the SHE. The SHE of UTBB FETs with a raised source/drain and/or shorter contact pitch could be comparable to that of bulk FETs in deeply scaled nodes. In addition, the doping concentration under the BOX should be optimized in order to achieve low and Tchip-independent SHE.

    本文言語English
    ホスト出版物のタイトル2013 IEEE International Electron Devices Meeting, IEDM 2013
    ページ7.4.1-7.4.4
    DOI
    出版ステータスPublished - 2013
    イベント2013 IEEE International Electron Devices Meeting, IEDM 2013 - Washington, DC, United States
    継続期間: 2013 12月 92013 12月 11

    出版物シリーズ

    名前Technical Digest - International Electron Devices Meeting, IEDM
    ISSN(印刷版)0163-1918

    Other

    Other2013 IEEE International Electron Devices Meeting, IEDM 2013
    国/地域United States
    CityWashington, DC
    Period13/12/913/12/11

    ASJC Scopus subject areas

    • 電子材料、光学材料、および磁性材料
    • 凝縮系物理学
    • 電子工学および電気工学
    • 材料化学

    フィンガープリント

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