抄録
Sub-microsecond excess carrier lifetimes have been measured by a contactless method and the electrical properties have been investigated by the isothermal capacitance method in heat-treated N-type silicon. It is found that the thermally induced donor level at Ev+0.39 eV acts as recombination center. By using the present contactless measurement system, it becomes possible to accurately measure lifetimes as short as 0.07 µsec, and resistivity-lifetime products, ρτ=0.1 Ωcm · µsec, have been achieved.
| 本文言語 | English |
|---|---|
| ページ（範囲） | 322-325 |
| ページ数 | 4 |
| ジャーナル | Japanese journal of applied physics |
| 巻 | 23 |
| 号 | 3 |
| DOI | |
| 出版ステータス | Published - 1984 3月 |
| 外部発表 | はい |
ASJC Scopus subject areas
- 工学（全般）
- 物理学および天文学（全般）