CuInSe2 epitaxial films have been grown by molecular beam epitaxy at a substrate temperature of TS = 450 °C. The vacancy-type defects which dominate the properties of the CuInSe2 films have been characterized and methods to control defects have been investigated. Films grown under In-flux excess conditions tend to show nonideal crystalline quality; the films are highly compensated with a high density of twins. Post-growth annealing of the films in air substantially reduced the twin density as well as the degree of compensation, implying that there is a strong correlation between Se-vacancies and the density of twins. Such improvement in the film quality was found to be responsible for in-diffused oxygen from the surface during the air-annealing process, and oxygen is considered to substitute for Se vacancies. The preliminary results showed that in situ incorporation of oxygen during the molecular beam epitaxial growth of CuInSe2 films made possible the reduction of twin densities.
|ジャーナル||Journal of Crystal Growth|
|出版ステータス||Published - 1999 5月|
|イベント||Proceedings of the 1998 10th International Conference on Molecular Beam Epitaxy (MBE-X) - Cannes|
継続期間: 1998 8月 31 → 1998 9月 4
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