Correlation of residual impurity concentration and acceptor electron paramagnetic resonance linewidth in isotopically engineered Si

A. R. Stegner; H. Tezuka; H. Riemann; N. V. Abrosimov; P. Becker; H. J. Pohl; M. L.W. Thewalt; K. M. Itoh; M. S. Brandt

doi:10.1063/1.3606548

Correlation of residual impurity concentration and acceptor electron paramagnetic resonance linewidth in isotopically engineered Si

A. R. Stegner, H. Tezuka, H. Riemann, N. V. Abrosimov, P. Becker, H. J. Pohl, M. L.W. Thewalt, K. M. Itoh, M. S. Brandt

物理情報工学科

研究成果: Article › 査読

4 被引用数 (Scopus)

抄録

Electron paramagnetic resonance (EPR) experiments on boron acceptors in isotopically engineered ²⁸Si samples with different degrees of chemical and isotopic purity are reported. The strong suppression of isotope-induced broadening effects in this material allows a direct observation of the linear correlation between the width of the inter-subband Δm = 1 EPR line and the concentrations of carbon, oxygen, and boron point defects down to a total concentration of ≈2 × 10¹⁵ cm^-3. When the impurity level is decreased further, the linewidth does not fall below 2.3 ± 0.2 mT, for which we discuss possible origins.

本文言語	English
論文番号	032101
ジャーナル	Applied Physics Letters
巻	99
号	3
DOI	https://doi.org/10.1063/1.3606548
出版ステータス	Published - 2011 7月 18

ASJC Scopus subject areas

物理学および天文学（その他）

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10.1063/1.3606548

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引用スタイル

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title = "Correlation of residual impurity concentration and acceptor electron paramagnetic resonance linewidth in isotopically engineered Si",

abstract = "Electron paramagnetic resonance (EPR) experiments on boron acceptors in isotopically engineered 28Si samples with different degrees of chemical and isotopic purity are reported. The strong suppression of isotope-induced broadening effects in this material allows a direct observation of the linear correlation between the width of the inter-subband Δm = 1 EPR line and the concentrations of carbon, oxygen, and boron point defects down to a total concentration of ≈2 × 1015 cm-3. When the impurity level is decreased further, the linewidth does not fall below 2.3 ± 0.2 mT, for which we discuss possible origins.",

author = "Stegner, {A. R.} and H. Tezuka and H. Riemann and Abrosimov, {N. V.} and P. Becker and Pohl, {H. J.} and Thewalt, {M. L.W.} and Itoh, {K. M.} and Brandt, {M. S.}",

note = "Funding Information: We acknowledge support from the JST-DFG Strategic Cooperative Program on Nanoelectronics and the Grant-in-Aid for Scientific Research by MEXT, Nanoquine, FIRST, and Keio Global COE.",

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T1 - Correlation of residual impurity concentration and acceptor electron paramagnetic resonance linewidth in isotopically engineered Si

AU - Stegner, A. R.

AU - Tezuka, H.

AU - Riemann, H.

AU - Abrosimov, N. V.

AU - Becker, P.

AU - Pohl, H. J.

AU - Thewalt, M. L.W.

AU - Itoh, K. M.

AU - Brandt, M. S.

N1 - Funding Information: We acknowledge support from the JST-DFG Strategic Cooperative Program on Nanoelectronics and the Grant-in-Aid for Scientific Research by MEXT, Nanoquine, FIRST, and Keio Global COE.

PY - 2011/7/18

Y1 - 2011/7/18

N2 - Electron paramagnetic resonance (EPR) experiments on boron acceptors in isotopically engineered 28Si samples with different degrees of chemical and isotopic purity are reported. The strong suppression of isotope-induced broadening effects in this material allows a direct observation of the linear correlation between the width of the inter-subband Δm = 1 EPR line and the concentrations of carbon, oxygen, and boron point defects down to a total concentration of ≈2 × 1015 cm-3. When the impurity level is decreased further, the linewidth does not fall below 2.3 ± 0.2 mT, for which we discuss possible origins.

AB - Electron paramagnetic resonance (EPR) experiments on boron acceptors in isotopically engineered 28Si samples with different degrees of chemical and isotopic purity are reported. The strong suppression of isotope-induced broadening effects in this material allows a direct observation of the linear correlation between the width of the inter-subband Δm = 1 EPR line and the concentrations of carbon, oxygen, and boron point defects down to a total concentration of ≈2 × 1015 cm-3. When the impurity level is decreased further, the linewidth does not fall below 2.3 ± 0.2 mT, for which we discuss possible origins.

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