TY - JOUR
T1 - Coulomb blockade in VLSI-compatible multiple-dot and single-dot MOSFETs
AU - Hiramoto, Toshiro
AU - Ishikuro, Hiroki
N1 - Funding Information:
The authors would like to thank Profs H. Fujita, Y. Arakawa, K. Hirakawa, S. Katsumoto for fruitful discussions. They also thank Dr T. Ikoma for his continuous encouragement. This work is partlysupported by aGrant-in-Aid for Scienti® c Research on Priority Area `Single Electron Devices and Their High Density Integration’, by the UK± Japan International Cooperative Research Programme `MesoscopicElectronics’andbytheIndustry± UniversityJointResearchProgramme `Qantuum Nanoelectronics’ from the Ministry of Education, Science, Sports, and Culture, Japan.
Copyright:
Copyright 2017 Elsevier B.V., All rights reserved.
PY - 1999/5
Y1 - 1999/5
N2 - Silicon-MOSFET-based single electron devices are promising for the future of extremely low power VLSI applications. Very narrow wire MOSFET and point contact MOSFET, which act as multiple-dot and single-dot single electron devices respectively, are fabricated using a VLSI-compatible anisotropic etching process. The Coulomb blockade phenomena in these devices have been extensively investigated. The devices show the Coulomb blockade oscillations at room temperature. At low temperatures, the coupling effects between dots play an important role in electron transport in the multiple-dot MOSFETs, while the quantum mechanical effects strongly affect the transport properties in the single-dot MOSFETs.
AB - Silicon-MOSFET-based single electron devices are promising for the future of extremely low power VLSI applications. Very narrow wire MOSFET and point contact MOSFET, which act as multiple-dot and single-dot single electron devices respectively, are fabricated using a VLSI-compatible anisotropic etching process. The Coulomb blockade phenomena in these devices have been extensively investigated. The devices show the Coulomb blockade oscillations at room temperature. At low temperatures, the coupling effects between dots play an important role in electron transport in the multiple-dot MOSFETs, while the quantum mechanical effects strongly affect the transport properties in the single-dot MOSFETs.
UR - https://www.scopus.com/pages/publications/0032673183
UR - https://www.scopus.com/pages/publications/0032673183#tab=citedBy
U2 - 10.1080/002072199133274
DO - 10.1080/002072199133274
M3 - Article
AN - SCOPUS:0032673183
SN - 0020-7217
VL - 86
SP - 591
EP - 603
JO - International Journal of Electronics
JF - International Journal of Electronics
IS - 5
ER -