TY - GEN
T1 - Cryogenic CMOS Performance Analysis Including BEOL Characteristics at 4K for Quantum Controller Application
AU - Okamoto, K.
AU - Tanaka, T.
AU - Miyamura, M.
AU - Ishikuro, H.
AU - Uchida, K.
AU - Sakamoto, T.
AU - Tada, M.
N1 - Funding Information:
Acknowledgments This work was supported by JST [Moonshot R&D][Grant Number JPMJMS2067]. The authors thank Dr. T. Yamamoto with NEC Corporation. A part of this work was performed in AIST Super Clean Room, Japan. References [1] F. Arute et al., Nature 574, (2019) 505-510. [2] T. Yamamoto, et al., Nature 425, (2003) 941-944. [3] B. Patra et al., ISSCC (2020) 305-306. [4] H. Homulle et al., Rev. Sc. Instr. 69 (2017) 1127-1139. [5] M. Tada, et al., Trans. Electron Devices, 54 (2007) 1867-1877. [6] H. B. Bakoglu, Circuits, Interconnections, and Packaging for VLSI. Reading, MA: Addison-Wesley, 1990.
Publisher Copyright:
© 2022 IEEE.
PY - 2022
Y1 - 2022
N2 - Cryo-CMOS circuit performance at 4K including both BEOL and FEOL characteristics has been investigated in a 65nm bulk CMOS for the first time. ON-current (Ion) of n/pMOSFET are improved +25%/+9% with excellent gate modulation (Ion/Ioff=∼109). Cu line/via resistances decrease with temperature due to reduction of phonon scattering, and -75%/-20% lower resistances are obtained at 4K. It is revealed that there is no inter-line capacitance change and no severe Joule heating effect (JHE) of Cu BEOL at 4K. The newly developed 4K-SPICE model including BEOL characteristics enables accurate CMOS circuit design at 4K, giving 5 ∼ 40% faster operation of RC line with clear dependence on driver-size and interconnect-load.
AB - Cryo-CMOS circuit performance at 4K including both BEOL and FEOL characteristics has been investigated in a 65nm bulk CMOS for the first time. ON-current (Ion) of n/pMOSFET are improved +25%/+9% with excellent gate modulation (Ion/Ioff=∼109). Cu line/via resistances decrease with temperature due to reduction of phonon scattering, and -75%/-20% lower resistances are obtained at 4K. It is revealed that there is no inter-line capacitance change and no severe Joule heating effect (JHE) of Cu BEOL at 4K. The newly developed 4K-SPICE model including BEOL characteristics enables accurate CMOS circuit design at 4K, giving 5 ∼ 40% faster operation of RC line with clear dependence on driver-size and interconnect-load.
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U2 - 10.1109/IITC52079.2022.9881293
DO - 10.1109/IITC52079.2022.9881293
M3 - Conference contribution
AN - SCOPUS:85139243251
T3 - 2022 IEEE International Interconnect Technology Conference, IITC 2022
SP - 139
EP - 141
BT - 2022 IEEE International Interconnect Technology Conference, IITC 2022
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2022 IEEE International Interconnect Technology Conference, IITC 2022
Y2 - 27 June 2022 through 30 June 2022
ER -