TY - JOUR
T1 - Crystalline Sb2Te3
T2 - Side Surfaces and Disappearance of Dirac Cones
AU - Kolobov, Alexander V.
AU - Fons, Paul
AU - Saito, Yuta
N1 - Funding Information:
This work was carried out within a Joint Research Project supported by the Russian Foundation for Basic Research (grant 20‐52‐50012) and the Japan Society for the Promotion of Science (grant JPJSBP120204815).
Publisher Copyright:
© 2021 Wiley-VCH GmbH
PY - 2021/3
Y1 - 2021/3
N2 - Sb2Te3 is an end point of quasibinary GeTe–Sb2Te3 phase-change alloys and also a prototypical topological insulator (TI). TIs are materials that behave like insulators in their interior but whose surfaces are characterized by metallic states with linear dispersion, the so-called Dirac cones. Such surface states are symmetry protected, robust, and are maintained even in the presence of surface defects. It has been tacitly implied that any surfaces of a TI possess this property. Herein, using ab initio simulations, it is demonstrated that cleaving Sb2Te3 along certain side surfaces may lead to the disappearance of Dirac surface states. In particular, it is shown that the (110) surface of the typical TI Sb2Te3 is slightly gapped, whereas the ((Formula presented.)) surface is metallic. The significance and potential benefits of the obtained results for practical applications in planar devices and memory cells are discussed.
AB - Sb2Te3 is an end point of quasibinary GeTe–Sb2Te3 phase-change alloys and also a prototypical topological insulator (TI). TIs are materials that behave like insulators in their interior but whose surfaces are characterized by metallic states with linear dispersion, the so-called Dirac cones. Such surface states are symmetry protected, robust, and are maintained even in the presence of surface defects. It has been tacitly implied that any surfaces of a TI possess this property. Herein, using ab initio simulations, it is demonstrated that cleaving Sb2Te3 along certain side surfaces may lead to the disappearance of Dirac surface states. In particular, it is shown that the (110) surface of the typical TI Sb2Te3 is slightly gapped, whereas the ((Formula presented.)) surface is metallic. The significance and potential benefits of the obtained results for practical applications in planar devices and memory cells are discussed.
KW - Dirac cones
KW - SbTe
KW - phase-change memory
KW - side surfaces
KW - topological insulators
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U2 - 10.1002/pssr.202000418
DO - 10.1002/pssr.202000418
M3 - Article
AN - SCOPUS:85099869713
SN - 1862-6254
VL - 15
JO - Physica Status Solidi - Rapid Research Letters
JF - Physica Status Solidi - Rapid Research Letters
IS - 3
M1 - 2000418
ER -