TY - JOUR
T1 - Current-driven phase-change optical gate switch using indium-tin-oxide heater
AU - Kato, Kentaro
AU - Kuwahara, Masashi
AU - Kawashima, Hitoshi
AU - Tsuruoka, Tohru
AU - Tsuda, Hiroyuki
N1 - Funding Information:
This work was conducted at the AIST Nano-Processing Facility and supported by the "Nanotechnology Platform Program" of the Ministry of Education, Culture, Sports, Science and Technology, Japan (MEXT). Authors are grateful to Professor Hideo Hosono of Tokyo Institute of Technology for his valuable suggestions on ITO.
Publisher Copyright:
© 2017 The Japan Society of Applied Physics.
PY - 2017/7
Y1 - 2017/7
N2 - We proposed and fabricated a current-driven phase-change optical gate switch using a Ge2Sb2Te 5 (GST225) thin film, an indium-tin-oxide (ITO) heater, and a Si waveguide. Microfabrication technology compatible with CMOS fabrication was used for the fabrication of the Si waveguide. The repetitive phase changing of GST225 was obtained by injecting a current pulse into the ITO heater beneath the GST225 thin film. The switching operation was observed by injecting a 100-ns current pulse of 20 mA into the ITO heater. The average extinction ratio over the wavelength range of 1,525 to 1,625nm was 1.2 dB.
AB - We proposed and fabricated a current-driven phase-change optical gate switch using a Ge2Sb2Te 5 (GST225) thin film, an indium-tin-oxide (ITO) heater, and a Si waveguide. Microfabrication technology compatible with CMOS fabrication was used for the fabrication of the Si waveguide. The repetitive phase changing of GST225 was obtained by injecting a current pulse into the ITO heater beneath the GST225 thin film. The switching operation was observed by injecting a 100-ns current pulse of 20 mA into the ITO heater. The average extinction ratio over the wavelength range of 1,525 to 1,625nm was 1.2 dB.
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U2 - 10.7567/APEX.10.072201
DO - 10.7567/APEX.10.072201
M3 - Article
AN - SCOPUS:85021797892
SN - 1882-0778
VL - 10
JO - Applied Physics Express
JF - Applied Physics Express
IS - 7
M1 - 072201
ER -