Degenerate layers in epitaxial ZnO films grown on sapphire substrates

H. Tampo, A. Yamada, P. Fons, H. Shibata, K. Matsubara, K. Iwata, S. Niki, K. Nakahara, H. Takasu

研究成果: Article査読

74 被引用数 (Scopus)

抄録

High-quality ZnO films were grown with a carrier concentration of 7.5×1016 cm-3 and a mobility of 132 cm2/V s at RT using a nitrogen-doped and vacuum-annealed buffer layer. Untreated and vacuum-annealed low-temperature (LT) buffer layers exhibited degenerate behavior which in turn effects the electrical properties of undoped ZnO films. Nitrogen-doped and vacuum-annealed buffer layers displayed little degenerate behavior and were found to enhance the electrical properties of undoped ZnO films grown on them. The dominant residual donor energy of 110 meV was found to be different.

本文言語English
ページ(範囲)4412-4414
ページ数3
ジャーナルApplied Physics Letters
84
22
DOI
出版ステータスPublished - 2004 5月 31
外部発表はい

ASJC Scopus subject areas

  • 物理学および天文学(その他)

フィンガープリント

「Degenerate layers in epitaxial ZnO films grown on sapphire substrates」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル