Dielectric Relaxation and Charge Transfer in Amorphous MoS2 Thin Films

Aleksei A. Kononov; Rene A. Castro; Diana D. Glavnaya; Nadezhda I. Anisimova; Gennady A. Bordovsky; Alexander V. Kolobov; Yuta Saito; Paul Fons

doi:10.1002/pssb.202000114

Dielectric Relaxation and Charge Transfer in Amorphous MoS₂ Thin Films

Aleksei A. Kononov, Rene A. Castro, Diana D. Glavnaya, Nadezhda I. Anisimova, Gennady A. Bordovsky, Alexander V. Kolobov, Yuta Saito, Paul Fons

研究成果: Article › 査読

6 被引用数 (Scopus)

抄録

The results of a study on dielectric relaxation and charge transfer in thin layers of amorphous MoS₂ using dielectric spectroscopy are presented. Both dipole-relaxation polarization and hopping charge transfer have been observed. The activation energies of the relaxation process E_a and conductivity E_σ have been calculated and found to be approximately equal; therefore, it is assumed that the two processes are based on the same underlying charge transfer mechanism.

本文言語	English
論文番号	2000114
ジャーナル	Physica Status Solidi (B) Basic Research
巻	257
号	11
DOI	https://doi.org/10.1002/pssb.202000114
出版ステータス	Published - 2020 11月
外部発表	はい

ASJC Scopus subject areas

電子材料、光学材料、および磁性材料
凝縮系物理学

文献へのアクセス

10.1002/pssb.202000114

他のファイルとリンク

引用スタイル

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AU - Castro, Rene A.

AU - Glavnaya, Diana D.

AU - Anisimova, Nadezhda I.

AU - Bordovsky, Gennady A.

AU - Kolobov, Alexander V.

AU - Saito, Yuta

AU - Fons, Paul

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AB - The results of a study on dielectric relaxation and charge transfer in thin layers of amorphous MoS2 using dielectric spectroscopy are presented. Both dipole-relaxation polarization and hopping charge transfer have been observed. The activation energies of the relaxation process Ea and conductivity Eσ have been calculated and found to be approximately equal; therefore, it is assumed that the two processes are based on the same underlying charge transfer mechanism.

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KW - transition metal dichalcogenides

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