Dielectric Relaxation and Photo-electromotive Force in Ge-Sb-Te/Si Structures

R. A. Castro-Arata; M. A. Goryaev; A. A. Kononov; Y. Saito; P. Fons; J. Tominaga; N. I. Anisimova; A. V. Kolobov

doi:10.5220/0009154201460150

Dielectric Relaxation and Photo-electromotive Force in Ge-Sb-Te/Si Structures

R. A. Castro-Arata, M. A. Goryaev, A. A. Kononov, Y. Saito, P. Fons, J. Tominaga, N. I. Anisimova, A. V. Kolobov

研究成果: Conference contribution

抄録

The dielectric properties and photovoltaic effect spectra in the compositions of amorphous layers GeSb₂Te₄ (GST 124), Ge₂Sb₂Te₅ (GST 225) и GeSb₄Te₇ (GST 147) applied on the monocrystallic silicon surface are investigated. It is shown that with a change in the GST composition, both the dielectric capacitivity and the frequency at which the maximum dielectric loss is observed change. It was found that the value of the change in photo-electromotive force is different for different layers: on samples with GST 124, the influence of amorphous layers is by an order of magnitude greater than for GST 225, and by 3 orders of magnitude greater than for GST 147.

本文言語	English
ホスト出版物のタイトル	PHOTOPTICS 2020 - Proceedings of the 8th International Conference on Photonics, Optics and Laser Technology
編集者	Pablo Albella, Maria Raposo, Paulo A. Ribeiro, David Andrews
出版社	Science and Technology Publications, Lda
ページ	146-150
ページ数	5
ISBN（印刷版）	9789897584015
DOI	https://doi.org/10.5220/0009154201460150
出版ステータス	Published - 2020
外部発表	はい
イベント	8th International Conference on Photonics, Optics and Laser Technology, PHOTOPTICS 2020 - Valletta, Malta 継続期間: 2020 2月 27 → 2020 2月 29

出版物シリーズ

名前	International Conference on Photonics, Optics and Laser Technology
ISSN（電子版）	2184-4364

Conference

Conference	8th International Conference on Photonics, Optics and Laser Technology, PHOTOPTICS 2020
国/地域	Malta
City	Valletta
Period	20/2/27 → 20/2/29

ASJC Scopus subject areas

原子分子物理学および光学
電子材料、光学材料、および磁性材料
電子工学および電気工学

UN SDG

この成果は、次の持続可能な開発目標に貢献しています

文献へのアクセス

10.5220/0009154201460150

他のファイルとリンク

引用スタイル

Castro-Arata, R. A., Goryaev, M. A., Kononov, A. A., Saito, Y., Fons, P., Tominaga, J., Anisimova, N. I., & Kolobov, A. V. (2020). Dielectric Relaxation and Photo-electromotive Force in Ge-Sb-Te/Si Structures. In P. Albella, M. Raposo, P. A. Ribeiro, & D. Andrews (Eds.), PHOTOPTICS 2020 - Proceedings of the 8th International Conference on Photonics, Optics and Laser Technology (pp. 146-150). (International Conference on Photonics, Optics and Laser Technology). Science and Technology Publications, Lda. https://doi.org/10.5220/0009154201460150

Dielectric Relaxation and Photo-electromotive Force in Ge-Sb-Te/Si Structures. / Castro-Arata, R. A.; Goryaev, M. A.; Kononov, A. A. その他.
PHOTOPTICS 2020 - Proceedings of the 8th International Conference on Photonics, Optics and Laser Technology. ed. / Pablo Albella; Maria Raposo; Paulo A. Ribeiro; David Andrews. Science and Technology Publications, Lda, 2020. p. 146-150 (International Conference on Photonics, Optics and Laser Technology).

研究成果: Conference contribution

Castro-Arata, RA, Goryaev, MA, Kononov, AA, Saito, Y, Fons, P, Tominaga, J, Anisimova, NI & Kolobov, AV 2020, Dielectric Relaxation and Photo-electromotive Force in Ge-Sb-Te/Si Structures. in P Albella, M Raposo, PA Ribeiro & D Andrews (eds), PHOTOPTICS 2020 - Proceedings of the 8th International Conference on Photonics, Optics and Laser Technology. International Conference on Photonics, Optics and Laser Technology, Science and Technology Publications, Lda, pp. 146-150, 8th International Conference on Photonics, Optics and Laser Technology, PHOTOPTICS 2020, Valletta, Malta, 20/2/27. https://doi.org/10.5220/0009154201460150

Castro-Arata RA, Goryaev MA, Kononov AA, Saito Y, Fons P, Tominaga J その他. Dielectric Relaxation and Photo-electromotive Force in Ge-Sb-Te/Si Structures. In Albella P, Raposo M, Ribeiro PA, Andrews D, editors, PHOTOPTICS 2020 - Proceedings of the 8th International Conference on Photonics, Optics and Laser Technology. Science and Technology Publications, Lda. 2020. p. 146-150. (International Conference on Photonics, Optics and Laser Technology). doi: 10.5220/0009154201460150

Castro-Arata, R. A. ; Goryaev, M. A. ; Kononov, A. A. その他. / Dielectric Relaxation and Photo-electromotive Force in Ge-Sb-Te/Si Structures. PHOTOPTICS 2020 - Proceedings of the 8th International Conference on Photonics, Optics and Laser Technology. editor / Pablo Albella ; Maria Raposo ; Paulo A. Ribeiro ; David Andrews. Science and Technology Publications, Lda, 2020. pp. 146-150 (International Conference on Photonics, Optics and Laser Technology).

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abstract = "The dielectric properties and photovoltaic effect spectra in the compositions of amorphous layers GeSb2Te4 (GST 124), Ge2Sb2Te5 (GST 225) и GeSb4Te7 (GST 147) applied on the monocrystallic silicon surface are investigated. It is shown that with a change in the GST composition, both the dielectric capacitivity and the frequency at which the maximum dielectric loss is observed change. It was found that the value of the change in photo-electromotive force is different for different layers: on samples with GST 124, the influence of amorphous layers is by an order of magnitude greater than for GST 225, and by 3 orders of magnitude greater than for GST 147.",

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AU - Castro-Arata, R. A.

AU - Goryaev, M. A.

AU - Kononov, A. A.

AU - Saito, Y.

AU - Fons, P.

AU - Tominaga, J.

AU - Anisimova, N. I.

AU - Kolobov, A. V.

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N2 - The dielectric properties and photovoltaic effect spectra in the compositions of amorphous layers GeSb2Te4 (GST 124), Ge2Sb2Te5 (GST 225) и GeSb4Te7 (GST 147) applied on the monocrystallic silicon surface are investigated. It is shown that with a change in the GST composition, both the dielectric capacitivity and the frequency at which the maximum dielectric loss is observed change. It was found that the value of the change in photo-electromotive force is different for different layers: on samples with GST 124, the influence of amorphous layers is by an order of magnitude greater than for GST 225, and by 3 orders of magnitude greater than for GST 147.

AB - The dielectric properties and photovoltaic effect spectra in the compositions of amorphous layers GeSb2Te4 (GST 124), Ge2Sb2Te5 (GST 225) и GeSb4Te7 (GST 147) applied on the monocrystallic silicon surface are investigated. It is shown that with a change in the GST composition, both the dielectric capacitivity and the frequency at which the maximum dielectric loss is observed change. It was found that the value of the change in photo-electromotive force is different for different layers: on samples with GST 124, the influence of amorphous layers is by an order of magnitude greater than for GST 225, and by 3 orders of magnitude greater than for GST 147.

KW - Dielectric Properties

KW - Photovoltaic Effect

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BT - PHOTOPTICS 2020 - Proceedings of the 8th International Conference on Photonics, Optics and Laser Technology

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Y2 - 27 February 2020 through 29 February 2020

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Dielectric Relaxation and Photo-electromotive Force in Ge-Sb-Te/Si Structures

抄録

出版物シリーズ

Conference

ASJC Scopus subject areas

UN SDG

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