Dielectric relaxation in the GeSb2Te4phase-change material

Aleksei Kononov, Yuta Saito, Paul Fons, Junji Tominaga, Nadezhda Anisimova, Alexander Kolobov

研究成果: Conference contribution

抄録

Dielectric relaxation in thin layers of amorphous and crystalline GeSb2Te4 was studied. A relaxation process associated with the manifestation of dipole-relaxation polarization is found. The appearance of dipoles is thought to be caused by the off-center location of Ge and Sb in cubic fragments of GeSb2Te4. The activation energies for relaxation processes were calculated to be Ea≈0.34 eV for amorphous and EC≈0.47 eV for crystalline GeSb2Te4.

本文言語English
ホスト出版物のタイトルProceedings of the XV International Conference "Physics of Dielectrics"
編集者Yuriy Gorokhovatsky, Dmitry Temnov, Viktoria Kapralova, Nicolay Sudar, Elena Velichko
出版社American Institute of Physics Inc.
ISBN(電子版)9780735440449
DOI
出版ステータスPublished - 2020 12月 1
イベント15th International Conference on Physics of Dielectrics, Dielectrics 2020 - St. Petersburg, Russian Federation
継続期間: 2020 10月 52020 10月 8

出版物シリーズ

名前AIP Conference Proceedings
2308
ISSN(印刷版)0094-243X
ISSN(電子版)1551-7616

Conference

Conference15th International Conference on Physics of Dielectrics, Dielectrics 2020
国/地域Russian Federation
CitySt. Petersburg
Period20/10/520/10/8

ASJC Scopus subject areas

  • 物理学および天文学一般

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