Direct observation of subband structures in (110) pMOSFETs under high magnetic field: Impact of energy split between bands and effective masses on hole mobility

Tsunaki Takahashi; Gento Yamahata; Jun Ogi; Tetsuo Kodera; Shunri Oda; Ken Uchida

doi:10.1109/IEDM.2009.5424316

Direct observation of subband structures in (110) pMOSFETs under high magnetic field: Impact of energy split between bands and effective masses on hole mobility

Tsunaki Takahashi, Gento Yamahata, Jun Ogi, Tetsuo Kodera, Shunri Oda, Ken Uchida

研究成果: Conference contribution

1 被引用数 (Scopus)

抄録

The band structures and carrier transport in (110) pFETs are thoroughly studied over a wide temperature range under high magnetic fields. In (110) pFETs, the degenerate hole bands in bulk Si are separated into the higher energy band (H band) and the lower energy band (L band). The energy difference between these bands is experimentally evaluated. The effective masses of each band are directly obtained from the Shubnikov-de Haas (SdH) oscillation analysis. It is demonstrated that mobility in the higher energy band is worse than that in the lower energy band, resulting in sharp mobility drop at higher surface carrier concentrations (N_s) and a clear hump in I_d-V_g characteristics at low temperatures of less than 20 K. In order to further enhance mobility in (110) pFETs, the increase in the energy split between H and L bands is important.

本文言語	English
ホスト出版物のタイトル	2009 International Electron Devices Meeting, IEDM 2009 - Technical Digest
ページ	19.7.1-19.7.4
DOI	https://doi.org/10.1109/IEDM.2009.5424316
出版ステータス	Published - 2009 12月 1
イベント	2009 International Electron Devices Meeting, IEDM 2009 - Baltimore, MD, United States 継続期間: 2009 12月 7 → 2009 12月 9

出版物シリーズ

名前	Technical Digest - International Electron Devices Meeting, IEDM
ISSN（印刷版）	0163-1918

Other

Other	2009 International Electron Devices Meeting, IEDM 2009
国/地域	United States
City	Baltimore, MD
Period	09/12/7 → 09/12/9

ASJC Scopus subject areas

電子材料、光学材料、および磁性材料
凝縮系物理学
電子工学および電気工学
材料化学

文献へのアクセス

10.1109/IEDM.2009.5424316

他のファイルとリンク

フィンガープリント

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引用スタイル

Takahashi, T., Yamahata, G., Ogi, J., Kodera, T., Oda, S., & Uchida, K. (2009). Direct observation of subband structures in (110) pMOSFETs under high magnetic field: Impact of energy split between bands and effective masses on hole mobility. In 2009 International Electron Devices Meeting, IEDM 2009 - Technical Digest (pp. 19.7.1-19.7.4). Article 5424316 (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM.2009.5424316

Direct observation of subband structures in (110) pMOSFETs under high magnetic field: Impact of energy split between bands and effective masses on hole mobility. / Takahashi, Tsunaki; Yamahata, Gento; Ogi, Jun その他.
2009 International Electron Devices Meeting, IEDM 2009 - Technical Digest. 2009. p. 19.7.1-19.7.4 5424316 (Technical Digest - International Electron Devices Meeting, IEDM).

研究成果: Conference contribution

Takahashi, T, Yamahata, G, Ogi, J, Kodera, T, Oda, S & Uchida, K 2009, Direct observation of subband structures in (110) pMOSFETs under high magnetic field: Impact of energy split between bands and effective masses on hole mobility. in 2009 International Electron Devices Meeting, IEDM 2009 - Technical Digest., 5424316, Technical Digest - International Electron Devices Meeting, IEDM, pp. 19.7.1-19.7.4, 2009 International Electron Devices Meeting, IEDM 2009, Baltimore, MD, United States, 09/12/7. https://doi.org/10.1109/IEDM.2009.5424316

Takahashi T, Yamahata G, Ogi J, Kodera T, Oda S, Uchida K. Direct observation of subband structures in (110) pMOSFETs under high magnetic field: Impact of energy split between bands and effective masses on hole mobility. In 2009 International Electron Devices Meeting, IEDM 2009 - Technical Digest. 2009. p. 19.7.1-19.7.4. 5424316. (Technical Digest - International Electron Devices Meeting, IEDM). doi: 10.1109/IEDM.2009.5424316

Takahashi, Tsunaki ; Yamahata, Gento ; Ogi, Jun その他. / Direct observation of subband structures in (110) pMOSFETs under high magnetic field : Impact of energy split between bands and effective masses on hole mobility. 2009 International Electron Devices Meeting, IEDM 2009 - Technical Digest. 2009. pp. 19.7.1-19.7.4 (Technical Digest - International Electron Devices Meeting, IEDM).

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