@article{5638e0b807384fdfb7a74a1f0346e5ca,
title = "Direct optical observation of compositional fluctuation in GaAs 1-xNx by near-field photoluminescence spectroscopy and microscopy with high spatial resolution",
abstract = "We describe imaging spectroscopy of GaAS1-xNx/GaAs single quantum wells using low-temperature near-field scanning optical microscope with a high spatial resolution of 35 nm. In near-field photoluminescence spectra of a GaAs1-xNx/GaAs(0=0.7%) quantum well, the narrow spectral peaks with a point emission spatial profile (localized exciton emission) come from local N-rich regions (spontaneous N clusters), and the broad peaks with spatial extension (delocalized exciton emission) are random alloy regions. Localized exciton emissions due to spontaneous N clusters are also observed in GaAs1-xNx with a higher N concentration (x = 1.2%).",
author = "K. Matsuda and T. Saiki and T. Yamada and T. Ishizuka",
note = "Funding Information: The authors thank M. Ohtsu and S. Mononobe for technical advice including the fabrication of the optical fiber probe, and N. Ikoma, M. Takahashi, A. Moto, and S. Takagishi for fruitful discussions. This study was performed through Active Nano-Characterization and Technology Project, Special Coordination Funds of the Ministry of Education, Culture, Sports, Science, and Technology of the Japanese Government.",
year = "2004",
month = oct,
day = "11",
doi = "10.1063/1.1806540",
language = "English",
volume = "85",
pages = "3077--3079",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "15",
}