Discovery of a metastable van der Waals semiconductor via polymorphic crystallization of an amorphous film

Yuta Saito, Shogo Hatayama, Wen Hsin Chang, Naoya Okada, Toshifumi Irisawa, Fumihiko Uesugi, Masaki Takeguchi, Yuji Sutou, Paul Fons

研究成果: Article査読

2 被引用数 (Scopus)

抄録

Here we report on the growth of thin crystalline films of the metastable phase GeTe2. Direct observation by transmission electron microscopy revealed a Te-Ge-Te stacking with van der Waals gaps. Moreover, electrical and optical measurements revealed the films exhibted semiconducting properties commensurate with electronics applications. Feasibility studies in which device structures were fabricated demonstrated the potential application of GeTe2 as an electronic material.

本文言語English
ページ(範囲)2254-2261
ページ数8
ジャーナルMaterials Horizons
10
6
DOI
出版ステータスPublished - 2023 4月 6

ASJC Scopus subject areas

  • 材料科学一般
  • 材料力学
  • プロセス化学およびプロセス工学
  • 電子工学および電気工学

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