Doping of ZnO nanowires using phosphorus diffusion from a spin-on doped glass source

A. Bocheux, I. C. Robin, J. Bonaimé, B. Hyot, A. V. Kolobov, K. V. Mitrofanov, P. Fons, J. Tominaga, Y. Tamenori, G. Feuillet

研究成果: Article査読

2 被引用数 (Scopus)

抄録

In this article, we report on ZnO nanowires that were phosphorus doped using a spin on dopant glass deposition and diffusion method. Photoluminescence measurements suggest that this process yields p-doped ZnO. The spatial location of P atoms was studied using x-ray near-edge absorption structure spectroscopy and it is concluded that the doping is amphoteric with P atoms located on both Zn and O sites.

本文言語English
論文番号194302
ジャーナルJournal of Applied Physics
115
19
DOI
出版ステータスPublished - 2014 5月 21
外部発表はい

ASJC Scopus subject areas

  • 物理学および天文学一般

フィンガープリント

「Doping of ZnO nanowires using phosphorus diffusion from a spin-on doped glass source」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル