TY - GEN
T1 - Doping position control of nitrogen-vacancy centers in diamond using nitrogen-doped chemical vapor deposition on micropatterned substrate
AU - Gomi, Tomohiro
AU - Tomizawa, Syuhei
AU - Ohashi, Kohei
AU - Itoh, Kohei M.
AU - Ishi-Hayase, Junko
AU - Watanabe, Hideyuki
AU - Umezawa, Hitoshi
AU - Shikata, Shinichi
PY - 2013
Y1 - 2013
N2 - We demonstrate lateral position control of nitrogen-vacancy centers doped near the surface of diamond substrate using micropatterned substrate for nitrogen-doped isotopically-enriched chemical vapor deposition. We confirm the spatially-selective doping of NV centers on etched area. We also found the nitrogen-vacancy creation efficiency at the etched area is much higher than that at the non-etched area of diamond substrate.
AB - We demonstrate lateral position control of nitrogen-vacancy centers doped near the surface of diamond substrate using micropatterned substrate for nitrogen-doped isotopically-enriched chemical vapor deposition. We confirm the spatially-selective doping of NV centers on etched area. We also found the nitrogen-vacancy creation efficiency at the etched area is much higher than that at the non-etched area of diamond substrate.
UR - http://www.scopus.com/inward/record.url?scp=84903776677&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84903776677&partnerID=8YFLogxK
U2 - 10.1364/cleo_qels.2013.jth2a.36
DO - 10.1364/cleo_qels.2013.jth2a.36
M3 - Conference contribution
AN - SCOPUS:84903776677
SN - 9781557529725
T3 - 2013 Conference on Lasers and Electro-Optics, CLEO 2013
BT - 2013 Conference on Lasers and Electro-Optics, CLEO 2013
PB - IEEE Computer Society
T2 - 2013 Conference on Lasers and Electro-Optics, CLEO 2013
Y2 - 9 June 2013 through 14 June 2013
ER -