Effect of nanoscale surface roughness on the bonding energy of direct-bonded silicon wafers

N. Miki; S. M. Spearing

doi:10.1063/1.1621086

Effect of nanoscale surface roughness on the bonding energy of direct-bonded silicon wafers

N. Miki
, S. M. Spearing

研究成果: Article › 査読

77 被引用数 (Scopus)

抄録

The effect of surface roughness at the nanoscale on direct-wafer bond quality was investigated. The bond quality was evaluated by measurement of the effective bonding energy. It was shown that the experimental results revealed a clear correlation between the bonding energy and the bearing ratio. It was found that a bearing depth of ∼1.4 nm is appropriate for the characterization of direct-bonded silicon at room temperature.

本文言語	English
ページ（範囲）	6800-6806
ページ数	7
ジャーナル	Journal of Applied Physics
巻	94
号	10
DOI	https://doi.org/10.1063/1.1621086
出版ステータス	Published - 2003 11月 15
外部発表	はい

ASJC Scopus subject areas

物理学および天文学一般

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10.1063/1.1621086

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abstract = "The effect of surface roughness at the nanoscale on direct-wafer bond quality was investigated. The bond quality was evaluated by measurement of the effective bonding energy. It was shown that the experimental results revealed a clear correlation between the bonding energy and the bearing ratio. It was found that a bearing depth of ∼1.4 nm is appropriate for the characterization of direct-bonded silicon at room temperature.",

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AB - The effect of surface roughness at the nanoscale on direct-wafer bond quality was investigated. The bond quality was evaluated by measurement of the effective bonding energy. It was shown that the experimental results revealed a clear correlation between the bonding energy and the bearing ratio. It was found that a bearing depth of ∼1.4 nm is appropriate for the characterization of direct-bonded silicon at room temperature.

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Effect of nanoscale surface roughness on the bonding energy of direct-bonded silicon wafers

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