Effect of Si/SiO 2 interface on silicon and boron diffusion in thermally grown SiO 2

Shigeto Fukatsu, Kohei M. Itoh, Masashi Uematsu, Hiroyuki Kageshima, Yasuo Takahashi, Kenji Shiraishi

研究成果: Article査読

17 被引用数 (Scopus)

抄録

Silicon self-diffusion and boron diffusion in SiO 2 were investigated as functions of the distance of diffusing silicon from the Si/SiO 2 interface at various temperatures in the range of 1150-1250°C using natSiO 2/ 28SiO 2 isotope heterostructures and 30Si- and B-implanted 28SiO 2 without and with a 30-nm-thick silicon nitride layer on the surface of each sample. The self-diffusivity of Si in SiO 2 did not depend on the oxygen concentration in the annealing ambient without the silicon nitride layer. The diffusion profiles of Si and B in the sample capped with the silicon nitride layer became broader as the distance from the Si/SiO 2 interface decreased. This dependence on the distance from the interface was caused by SiO molecules, which are generated at the interface and diffuse into SiO 2. The simulated results, taking into account the role of SiO molecules, showed good agreement with each experimental profile of 30Si and B.

本文言語English
ページ(範囲)7837-7842
ページ数6
ジャーナルJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
43
11 B
DOI
出版ステータスPublished - 2004 11月

ASJC Scopus subject areas

  • 工学一般
  • 物理学および天文学一般

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