TY - JOUR
T1 - Elastic and Inelastic Spin Transport in SrTiO3-based Magnetic Heterostructure
AU - Soya, Nozomi
AU - Katase, Takayoshi
AU - Ando, Kazuya
N1 - Funding Information:
This work was supported by JST FOREST Program (Grant Number JPMJFR2032), JSPS KAKENHI (Grant Numbers 19H00864, 20H00337, 20H02593), Asahi Glass Foundation, and Spintronics Research Network of Japan (Spin‐RNJ). N.S. was supported by JSPS Grant‐in‐Aid for Research Fellowship for Young Scientists (DC1)(Grant Number 22J21317).
Publisher Copyright:
© 2022 Wiley-VCH GmbH.
PY - 2022/9
Y1 - 2022/9
N2 - With recent developments in the field of spin-orbitronics, two-dimensional electron gases (2DEGs) with Rashba-type spin-orbit coupling have emerged as an important component of spin-based devices. One of the promising platforms is the 2DEG in SrTiO3-based structures, which has been the fundamental building block of oxide electronics. The 2DEG formed due to the redox reactions at metal/SrTiO3 interfaces has been incorporated into magnetic heterostructures, demonstrating efficient spin-to-charge conversion through the inverse Edelstein effect due to the sizable Rashba spin-orbit coupling. However, evidence for the charge-to-spin conversion, a technologically more important process, has been lacking, and furthermore, the spin transport mechanism in the magnetic heterostructure has been unclear. Here, the charge-to-spin conversion induced by the direct Edelstein effect in the 2DEG at an Al/SrTiO3 interface is demonstrated. The effective charge-to-spin conversion efficiency of the 2DEG exceeds 10% at room temperature, which is comparable to that of the archetypal spin-to-charge converter, Pt. The high effective charge-to-spin conversion efficiency is found to be suppressed by decreasing temperature, demonstrating a crossover of the dominant spin transport mechanism from the inelastic tunneling to elastic tunneling induced by decreasing temperature. These findings will provide a clue to unlock the full potential of oxide-based spin-orbitronic devices.
AB - With recent developments in the field of spin-orbitronics, two-dimensional electron gases (2DEGs) with Rashba-type spin-orbit coupling have emerged as an important component of spin-based devices. One of the promising platforms is the 2DEG in SrTiO3-based structures, which has been the fundamental building block of oxide electronics. The 2DEG formed due to the redox reactions at metal/SrTiO3 interfaces has been incorporated into magnetic heterostructures, demonstrating efficient spin-to-charge conversion through the inverse Edelstein effect due to the sizable Rashba spin-orbit coupling. However, evidence for the charge-to-spin conversion, a technologically more important process, has been lacking, and furthermore, the spin transport mechanism in the magnetic heterostructure has been unclear. Here, the charge-to-spin conversion induced by the direct Edelstein effect in the 2DEG at an Al/SrTiO3 interface is demonstrated. The effective charge-to-spin conversion efficiency of the 2DEG exceeds 10% at room temperature, which is comparable to that of the archetypal spin-to-charge converter, Pt. The high effective charge-to-spin conversion efficiency is found to be suppressed by decreasing temperature, demonstrating a crossover of the dominant spin transport mechanism from the inelastic tunneling to elastic tunneling induced by decreasing temperature. These findings will provide a clue to unlock the full potential of oxide-based spin-orbitronic devices.
KW - Edelstein effect
KW - spin-orbit torque
KW - two-dimensional electron gas
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U2 - 10.1002/aelm.202200232
DO - 10.1002/aelm.202200232
M3 - Article
AN - SCOPUS:85132601685
SN - 2199-160X
VL - 8
JO - Advanced Electronic Materials
JF - Advanced Electronic Materials
IS - 9
M1 - 2200232
ER -