TY - JOUR
T1 - Electric field broadening of arsenic donor states in strongly compensated n-type Ge:(As, Ga)
AU - Kato, Jiro
AU - Itoh, Kohei M.
AU - Haller, Eugene E.
PY - 2001
Y1 - 2001
N2 - We discuss on the broadening of ground-state to bound excited-state transitions of shallow donors in strongly compensated n-type Ge in the presence of electric fields and their gradients arising from randomly distributed ionized impurities. Low-temperature (T = 3.2 K) far-infrared absorption spectra of strongly compensated n-type Ge:(As,Ga) have been obtained for samples having ionized impurity concentration NI = 2.2 × 1013-2.6 × 1014 cm-3. Absorption peaks corresponding to 1s-2p± transition of arsenic impurities are observed, and broadened linearly with the ionized impurity concentration due to interactions between electrons and the quadrupole moments of ionized donors. The slope of the peak line width plotted against NI changes at NI ≈ 8 × 1013 cm-3 due to the transition of ionized impurity distribution from random (NI < 8 × 1013 cm-3) to correlated (NI 8 × 1013 cm-3).
AB - We discuss on the broadening of ground-state to bound excited-state transitions of shallow donors in strongly compensated n-type Ge in the presence of electric fields and their gradients arising from randomly distributed ionized impurities. Low-temperature (T = 3.2 K) far-infrared absorption spectra of strongly compensated n-type Ge:(As,Ga) have been obtained for samples having ionized impurity concentration NI = 2.2 × 1013-2.6 × 1014 cm-3. Absorption peaks corresponding to 1s-2p± transition of arsenic impurities are observed, and broadened linearly with the ionized impurity concentration due to interactions between electrons and the quadrupole moments of ionized donors. The slope of the peak line width plotted against NI changes at NI ≈ 8 × 1013 cm-3 due to the transition of ionized impurity distribution from random (NI < 8 × 1013 cm-3) to correlated (NI 8 × 1013 cm-3).
KW - Compensated semiconductors
KW - Impurity absorption
KW - Impurity distribution
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U2 - 10.1016/S0921-4526(01)00398-2
DO - 10.1016/S0921-4526(01)00398-2
M3 - Conference article
AN - SCOPUS:0034972972
SN - 0921-4526
VL - 302-303
SP - 1
EP - 6
JO - Physica B: Condensed Matter
JF - Physica B: Condensed Matter
T2 - Yanada Conference LIV. 9th International Conference on Shallow-Level Centers in Semiconductors
Y2 - 24 September 2000 through 27 September 2000
ER -