Electron dynamics and device physics of short-channel HEMTs: Transverse-domain formation, velocity overshoot, and short-channel effects

Yuji Awano; Makoto Kosugi; Shigeru Kuroda; Takashi Mimura; Masayuki Abe

Electron dynamics and device physics of short-channel HEMTs: Transverse-domain formation, velocity overshoot, and short-channel effects

Yuji Awano, Makoto Kosugi, Shigeru Kuroda, Takashi Mimura, Masayuki Abe

研究成果: Paper › 査読

抄録

The authors simulated the electron dynamics and physics in sub-quarter-micron-gate HEMTs (high electron mobility transistors) and fabricated devices for testing their theories on the short-channel effect. They confirmed near-ballistic electron transport under the gate and predicted transverse-domain formation. They introduce a parameter called the channel aspect ratio, which could serve as a design rule for determining the extent of the short-channel effect. Measurements show that the threshold voltage shift is almost negligible for gates as short as 0.14 μm. Thus, within the range studied, HEMTs do require a special design that would limit their applications.

本文言語	English
ページ	46-55
ページ数	10
出版ステータス	Published - 1989 12月 1
外部発表	はい
イベント	Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits - Ithaca, NY, USA 継続期間: 1989 8月 7 → 1989 8月 9

Other

Other	Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits
City	Ithaca, NY, USA
Period	89/8/7 → 89/8/9

ASJC Scopus subject areas

工学（全般）

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引用スタイル

Electron dynamics and device physics of short-channel HEMTs: Transverse-domain formation, velocity overshoot, and short-channel effects. / Awano, Yuji; Kosugi, Makoto; Kuroda, Shigeru その他.
1989. 46-55 Paper presented at Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, Ithaca, NY, USA.

研究成果: Paper › 査読

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