The authors simulated the electron dynamics and physics in sub-quarter-micron-gate HEMTs (high electron mobility transistors) and fabricated devices for testing their theories on the short-channel effect. They confirmed near-ballistic electron transport under the gate and predicted transverse-domain formation. They introduce a parameter called the channel aspect ratio, which could serve as a design rule for determining the extent of the short-channel effect. Measurements show that the threshold voltage shift is almost negligible for gates as short as 0.14 μm. Thus, within the range studied, HEMTs do require a special design that would limit their applications.
|出版ステータス||Published - 1989 12月 1|
|イベント||Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits - Ithaca, NY, USA|
継続期間: 1989 8月 7 → 1989 8月 9
|Other||Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits|
|City||Ithaca, NY, USA|
|Period||89/8/7 → 89/8/9|
ASJC Scopus subject areas