Electron spin resonance study of surface and oxide interface spin-triplet centers on (100) silicon wafers

H. Saito; S. Hayashi; Y. Kusano; K. M. Itoh; M. P. Vlasenko; L. S. Vlasenko

doi:10.1063/1.5010816

Electron spin resonance study of surface and oxide interface spin-triplet centers on (100) silicon wafers

H. Saito, S. Hayashi, Y. Kusano, K. M. Itoh, M. P. Vlasenko, L. S. Vlasenko

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研究成果: Article › 査読

1 被引用数 (Scopus)

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Electron spin resonance (ESR) spectra of surface and interface recombination centers recently observed on (001) silicon wafers, labeled P_m and KU1, were studied using spin dependent microwave photoconductivity. Both ESR spectra, having the orthorhombic symmetry and spins S = 1/2 and S = 1 for P_m and KU1, respectively, were observed in the commercially available surface oxidized (001)-Si wafers. Systematic studies on annealing and oxidation conditions for the P_m and KU1 formation conclude that both ESR spectra arise from the same center that contains the interaction between the two nearest Si dangling bonds on the (001) Si surface.

本文言語	English
論文番号	161582
ジャーナル	Journal of Applied Physics
巻	123
号	16
DOI	https://doi.org/10.1063/1.5010816
出版ステータス	Published - 2018 4月 28

ASJC Scopus subject areas

物理学および天文学一般

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10.1063/1.5010816

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title = "Electron spin resonance study of surface and oxide interface spin-triplet centers on (100) silicon wafers",

abstract = "Electron spin resonance (ESR) spectra of surface and interface recombination centers recently observed on (001) silicon wafers, labeled Pm and KU1, were studied using spin dependent microwave photoconductivity. Both ESR spectra, having the orthorhombic symmetry and spins S = 1/2 and S = 1 for Pm and KU1, respectively, were observed in the commercially available surface oxidized (001)-Si wafers. Systematic studies on annealing and oxidation conditions for the Pm and KU1 formation conclude that both ESR spectra arise from the same center that contains the interaction between the two nearest Si dangling bonds on the (001) Si surface.",

author = "H. Saito and S. Hayashi and Y. Kusano and Itoh, {K. M.} and Vlasenko, {M. P.} and Vlasenko, {L. S.}",

note = "Funding Information: This work was supported by the JSPS Core-to-Core Program and Spin RNJ. We thank George Watkins for his continuous encouragement in this work. Publisher Copyright: {\textcopyright} 2018 Author(s).",

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doi = "10.1063/1.5010816",

language = "English",

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journal = "Journal of Applied Physics",

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T1 - Electron spin resonance study of surface and oxide interface spin-triplet centers on (100) silicon wafers

AU - Saito, H.

AU - Hayashi, S.

AU - Kusano, Y.

AU - Itoh, K. M.

AU - Vlasenko, M. P.

AU - Vlasenko, L. S.

N1 - Funding Information: This work was supported by the JSPS Core-to-Core Program and Spin RNJ. We thank George Watkins for his continuous encouragement in this work. Publisher Copyright: © 2018 Author(s).

PY - 2018/4/28

Y1 - 2018/4/28

N2 - Electron spin resonance (ESR) spectra of surface and interface recombination centers recently observed on (001) silicon wafers, labeled Pm and KU1, were studied using spin dependent microwave photoconductivity. Both ESR spectra, having the orthorhombic symmetry and spins S = 1/2 and S = 1 for Pm and KU1, respectively, were observed in the commercially available surface oxidized (001)-Si wafers. Systematic studies on annealing and oxidation conditions for the Pm and KU1 formation conclude that both ESR spectra arise from the same center that contains the interaction between the two nearest Si dangling bonds on the (001) Si surface.

AB - Electron spin resonance (ESR) spectra of surface and interface recombination centers recently observed on (001) silicon wafers, labeled Pm and KU1, were studied using spin dependent microwave photoconductivity. Both ESR spectra, having the orthorhombic symmetry and spins S = 1/2 and S = 1 for Pm and KU1, respectively, were observed in the commercially available surface oxidized (001)-Si wafers. Systematic studies on annealing and oxidation conditions for the Pm and KU1 formation conclude that both ESR spectra arise from the same center that contains the interaction between the two nearest Si dangling bonds on the (001) Si surface.

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Electron spin resonance study of surface and oxide interface spin-triplet centers on (100) silicon wafers

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